Datasheet > UNR411D(UN411D)

UNR411D(UN411D)

更新时间： 2024-10-02 23:39:31

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
15页	374K
描述
Composite Device - Transistors with built-in Resistor

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中文翻译

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数据手册

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UNR411D(UN411D) 数据手册

Transistors with built-in Resistor

UNR41XX Series (UN41XX Series)

Silicon PNP epitaxial planar transistor

Unit: mm

4.0 0.2

2.0 ^0.2

For digital circuits

0.75 max.

■ Features

•

Costs can be reduced through downsizing of the equipment and

reduction of the number of parts

•

New S type package, allowing supply with the radial taping

■ Resistance by Part Number

(R₁)

(R₂)



+0.20

–0.10

0.45

•

UNR4110 (UN4110)

UNR4111 (UN4111)

UNR4112 (UN4112)

UNR4113 (UN4113)

UNR4114 (UN4114)

UNR4115 (UN4115)

UNR4116 (UN4116)

UNR4117 (UN4117)

UNR4118 (UN4118)

UNR4119 (UN4119)

UNR411D (UN411D)

UNR411E (UN411E)

UNR411F (UN411F)

UNR411H (UN411H)

UNR411L (UN411L)

UNR411M

47 kΩ

10 kΩ

22 kΩ

47 kΩ

10 kΩ

4.7 kΩ

22 kΩ

0.51 kΩ

1 kΩ

47 kΩ

4.7 kΩ

2.2 kΩ

4.7 kΩ

2.2 kΩ

4.7 kΩ

+0.20

0.45

–0.10

(2.5) (2.5)

10 kΩ

22 kΩ

47 kΩ



0.7 ^0.1

1: Emitter

2: Collector

3: Base

NS-B1 Package



5.1 kΩ

10 kΩ

22 kΩ

10 kΩ

4.7 kΩ

47 kΩ

Internal Connection

R₁

R₂

UNR411N

■ Absolute Maximum Ratings T_a= 25°C

Parameter

Collector to base voltage

Collector to emitter voltage

Collector current

Symbol

V_CBO

V_CEO

I_C

Rating

Unit

−50

−100

°C

Total power dissipation

Junction temperature

Storage temperature

P_T

300

T_j

150

T_stg

−55 to +150

°C

Note) The part numbers in the parenthesis show conventional part number.

Publication date: July 2002

SJH00018CED

12 3 4 5 6 7...15

中文翻译

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与UNR411D(UN411D)相关器件

型号	品牌	获取价格	描述	数据表
UNR411D\|UN411D	ETC	获取价格	Composite Device - Transistors with built-in Resistor
UNR411DR	PANASONIC	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, NS-B1,
UNR411E	PANASONIC	获取价格	Silicon PNP epitaxial planar type
UNR411E(UN411E)	ETC	获取价格	複合デバイス－抵抗内蔵型トランジスタ
UNR411E\|UN411E	ETC	获取价格	Composite Device - Transistors with built-in Resistor
UNR411ER	PANASONIC	获取价格	暂无描述
UNR411F	PANASONIC	获取价格	Silicon PNP epitaxial planar type
UNR411F(UN411F)	ETC	获取价格	Composite Device - Transistors with built-in Resistor
UNR411F\|UN411F	ETC	获取价格	Composite Device - Transistors with built-in Resistor
UNR411FQ	PANASONIC	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, NS-B1,