Datasheet > UMD6N

UMD6N

更新时间： 2024-09-25 08:24:15

品牌	Logo	应用领域
SECOS		晶体数字晶体管
页数	文件大小	规格书
2页	125K
描述
Dual NPN+PNP Digital Transistors

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中文翻译

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技术参数
数据手册

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UMD6N 技术参数

生命周期：	Contact Manufacturer	Reach Compliance Code：	compliant
风险等级：	5.58	Base Number Matches：	1

UMD6N 数据手册

UMD6N

Dual NPN+PNP Digital Transistors

(Built-in Resistors)

Elektronische Bauelemente

RoHS Compliant Product

A suffix of “-C” specifies halogen & lead-free

FEATURES

SOT-363



DTA143T(PNP) and DTC143T(NPN) transistors

are built-in a package.

Transistor elements are independent, eliminating

interference.

Mounting cost and area can be cut in half.

EQUIVALENT CIRCUIT



D G

Millimeter

Min. Max.

0.100 REF.

0.525 REF.

REF.

Min.

Max.

2.20

2.45

1.35

1.10

2.00

2.15

1.15

0.90

0.08

0.15

8°

1.20

0.15

1.40

0.35

0.650 TYP.

MARKING：D6

ABSOLUTE MAXIMUM RATINGS at Ta = 25°C

Parameter

Symbol

Value

Unit

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_C

100

Collector current

℃

Collector Power dissipation

Junction & Storage temperature

P_C

150

T_J, T_STG

150, -55 ~ 150

ABSOLUTE MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS at Ta = 25°C

Min.

Typ.

Max.

Parameter

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

Symbol

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

Unit

Test Conditions

I_C= 50A

I_C= 1mA

A

I_E= 50A

0.5

0.3

600

6.11

V_CB= 50V

Emitter cut-off current

I_EBO

V_EB= 4V

Collector-emitter saturation voltage

DC current transfer ratio

V_CE(sat)

h_FE

I_C= 5mA, I_B= 0.25mA

V_CE= 5V, I_C= 1mA

100

3.29

Input resistance

R₁

4.7

K

_CE= 10V, I_E= -5mA,

Transition frequency

f_T

250

MHz

f=100MHz

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

30-Jun-2010 Rev. A

Page 1 of 2

中文翻译

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