Datasheet > UF8B

UF8B

更新时间： 2024-09-27 12:32:19

品牌	Logo	应用领域
亞昕 - YEASHIN		/
页数	文件大小	规格书
2页	39K
描述
SURFACE MOUNT ULTRAFAST RECTIFI ER VOLTAGE - 50 to 1000 Volts CURR ENT - 8.0 Amperes

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中文翻译

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数据手册

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UF8B 数据手册

DATA SHEET

UF8A THRU UF8M

SEMICONDUCTOR

SURFACE MOUNT ULTRAFAST RECTIFI ER

VOLTAGE - 50 to 1000 Volts CURR ENT - 8.0 Amperes

Unit:inch(mm)

SMC/DO-214AB

FEATURES

• For surface mounted applications

• Low profile package

.128(3.25)

.108(2.75)

• Built-in strain relief

.245(6.22)

.220(5.59)

• Easy pick and place

• Ultrafast recovery times for high efficiency

• Plastic package has Underwriters Laboratory

Flammability Classification 94V-O

• Glass passivated junction

.280(7.11)

.260(6.60)

• High temperature soldering:

.012(.305)

.006(.152)

260 ^OC /10 seconds at terminals

• High temperature soldering : 260^OC / 10 seconds at terminals

•

Pb free product at available : 99% Sn above meet RoHS environment

substance directive request

.103(2.62)

.079(2.00)

MECHANICAL DATA

.008(.203)

.002(.051)

.050(1.27)

.030(0.76)

• Case: JEDEC DO-214AB molded plastic

Terminals: Solder plated, solderable per MIL-STD-750,

• Method 2026

.320(8.13)

.305(7.75)

• Polarity: Indicated by cathode band

• Standard packaging: 16mm tape (EIA-481)

Weight: 0.007 ounce, 0.21 gram

CHARACTERISTICS

Maximum Recurrent Peak Reverse Voltage

Maximum RMS Voltage

SYMBOL UF8A

UF8B

100

UF8D

UF8G

400

UF8J

UF8K

UF8M

1000

700

UNIT

VRRM

VRMS

VDC

200

140

200

600

420

600

800

560

800

280

Maximum DC Blocking Voltage

Maximum Average Forward

100

400

1000

I(AV)

8.0

°C

@TL =75

Rectified Current

Peak Forward Surge Current

8.3ms single half sine-wave

IFSM

100

super imposed on rated load (JEDEC METHOD)

Maximum forward Voltage at 8.0A DC

1.0

1.3

1.5

1.7

Maximum DC Reverse Current

at Rated DC Blocking Voltage

@TJ =25°C

°C

@TJ =100

100

Maximum Reverse Recovery Time (Note 1)

Typical Junction

TRR

Capacitance (Note 2)

Typical Thermal Resistance (Note 3)

Operating Temperature Range

Storage Temperature Range

RθJL

°C/W

°C

-55 to +150

°C

TSTG

NOTES : 1.Reverse Recovery Test Conditions :IF=0.5A,IR=1.0A,IRR=0.25A.

2.Measured at 1.0MHz and applied reverse voltage of 4.0V DC.

3.Thermal Resistance junction to Lead.

http://www.yeashin.com

REV.02 20110725

中文翻译

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