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UF5407-TB-LF PDF预览

UF5407-TB-LF

更新时间: 2024-09-25 19:06:19
品牌 Logo 应用领域
WTE 超快恢复二极管快速恢复二极管
页数 文件大小 规格书
4页 50K
描述
Rectifier Diode, 1 Phase, 1 Element, 3A, 800V V(RRM), Silicon, DO-201AD, ROHS COMPLIANT, PLASTIC PACKAGE-2

UF5407-TB-LF 数据手册

 浏览型号UF5407-TB-LF的Datasheet PDF文件第2页浏览型号UF5407-TB-LF的Datasheet PDF文件第3页浏览型号UF5407-TB-LF的Datasheet PDF文件第4页 
WTE  
POWER SEMICONDUCTORS  
Pb  
UF5400 – UF5408  
3.0A ULTRAFAST DIODE  
Features  
!
Diffused Junction  
!
!
!
!
Low Forward Voltage Drop  
High Current Capability  
High Reliability  
A
B
A
High Surge Current Capability  
Mechanical Data  
C
!
!
Case: DO-201AD, Molded Plastic  
Terminals: Plated Leads Solderable per  
MIL-STD-202, Method 208  
Polarity: Cathode Band  
Weight: 1.2 grams (approx.)  
Mounting Position: Any  
Marking: Type Number  
Lead Free: For RoHS / Lead Free Version,  
Add “-LF” Suffix to Part Number, See Page 4  
D
DO-201AD  
Min  
Dim  
A
Max  
!
!
!
!
!
25.4  
B
7.20  
9.50  
1.30  
5.30  
C
1.20  
D
4.80  
All Dimensions in mm  
Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified  
Single Phase, half wave, 60Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
UF  
UF  
UF  
UF  
UF  
UF  
UF  
UF  
Characteristic  
Symbol  
Unit  
5400 5401 5402 5403 5404 5406 5407 5408  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
VRRM  
VRWM  
VR  
50  
35  
100  
70  
200  
140  
300  
210  
400  
280  
600  
420  
800  
560  
1000  
700  
V
RMS Reverse Voltage  
VR(RMS)  
IO  
V
A
Average Rectified Output Current  
(Note 1)  
3.0  
@TA = 55°C  
Non-Repetitive Peak Forward Surge Current  
8.3ms Single half sine-wave superimposed on  
rated load (JEDEC Method)  
IFSM  
150  
A
Forward Voltage  
@IF = 3.0A  
VFM  
IRM  
1.0  
1.3  
1.7  
V
Peak Reverse Current  
@TA = 25°C  
10  
100  
µA  
At Rated DC Blocking Voltage @TA = 100°C  
Reverse Recovery Time (Note 2)  
Typical Junction Capacitance (Note 3)  
Operating Temperature Range  
trr  
Cj  
50  
80  
75  
50  
nS  
pF  
°C  
°C  
Tj  
-65 to +125  
-65 to +150  
Storage Temperature Range  
TSTG  
Note: 1. Leads maintained at ambient temperature at a distance of 9.5mm from the case  
2. Measured with IF = 0.5A, IR = 1.0A, IRR = 0.25A. See figure 5.  
3. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.  
UF5400 – UF5408  
1 of 4  
© 2006 Won-Top Electronics  

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Rectifier Diode, 1 Phase, 1 Element, 3A, 1000V V(RRM), Silicon, DO-201AD, PLASTIC PACKAGE-