Datasheet > UF5400

UF5400

更新时间： 2024-09-28 05:55:47

品牌	Logo	应用领域
DIOTECH		超快恢复二极管快速恢复二极管
页数	文件大小	规格书
2页	627K
描述
ULTRA FAST RECOVERY SILICON RECTIFIER

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中文翻译

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数据手册

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UF5400 数据手册

UF5400 THRU UF5408

ULTRA FAST RECOVERY SILICON RECTIFIER

Reverse Voltage - 50 to 1000 Volts

Forward Current - 3.0 Ampere

FEATURES

DO-201AD

●

The plastic package carries Underwriters Laboratory

Flammability Classification 94V-0

●

Ultra fast switching for high efficiency

Low reverse leakage

●

1.0 (25.4)

MIN.

High forward surge current capability

High temperature soldering guaranteed:

0.220(5.6)

0.197(5.0)

DIA.

250 C/10 seconds,0.375”(9.5mm) lead length,

5 lbs. (2.3kg) tension

0.375(9.5)

0.285(7.2)

MECHANICAL DATA

Case: JEDEC DO-201AD molded plastic body

Terminals: Plated axial leads, solderable per MIL-STD-750,

Method 2026

1.0 (25.4)

MIN.

Polarity: Color band denotes cathode end

Mounting Position: Any

0.052(1.3)

0.048(1.2)

DIA.

Weight:0.04 ounce, 1.10 grams

Dimensions in inches and (millimeters)

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25 C ambient temperature unless otherwise specified.

Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.

UF UF

SYMBOLS

UNITS

Characteristic

5400 5401 5402 5403 5404 5405 5406 5407 5408

Maximum repetitive peak reverse voltage

Maximum RMS voltage

50 100 200 300 400 500 600 800 1000

V^RRM

VRMS

VDC

70 140 210 280 350 420 560 700

50 100 200 300 400 500 600 800 1000

Maximum DC blocking voltage

Maximum average forward rectified current

0.375”(9.5mm) lead length at T^A=55 C

Peak forward surge current

I(AV)

3.0

150.0

IFSM

8.3ms single half sine-wave superimposed on

rated load (JEDEC Method)

Maximum instantaneous forward voltage at 3.0A

1.0

1.30

1.70

Maximum DC reverse current

at rated DC blocking voltage

Maximum reverse recovery time

T^A=25 C

T^A=100 C

(NOTE 1)

5.0

100.0

µA

t^rr

Typical junction capacitance (NOTE 2)

C^J

R JA

C/W

20.0

Typical thermal resistance (NOTE 3)

Operating junction and storage temperature range

TJ,TSTG

-65 to +150

Note:1.Reverse recovery condition I^F=0.5A,IR=1.0A,Irr=0.25A

2.Measured at 1MHz and applied reverse voltage of 4.0V D.C.

3.Thermal resistance from junction to ambient at 0.375”(9.5mm)lead length,P.C.B. mounted

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