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UF5400_10 PDF预览

UF5400_10

更新时间: 2024-11-16 08:25:07
品牌 Logo 应用领域
德欧泰克 - DIOTEC 整流二极管开关
页数 文件大小 规格书
2页 93K
描述
Ultrafast Switching Silicon Rectifier Diodes - Ultraschnelle Silizium-Gleichrichterdioden

UF5400_10 数据手册

 浏览型号UF5400_10的Datasheet PDF文件第2页 
UF5400 ... UF5408  
UF5400 ... UF5408  
Ultrafast Switching Silicon Rectifier Diodes – Ultraschnelle Silizium-Gleichrichterdioden  
Version 2010-03-30  
Nominal current  
Nennstrom  
3 A  
Repetitive peak reverse voltage  
Periodische Spitzensperrspannung  
50...1000 V  
~ DO-201  
0.8 g  
Ø 4.5+0.1  
-0.3  
Plastic case  
Kunststoffgehäuse  
Weight approx.  
Gewicht ca.  
Plastic material has UL classification 94V-0  
Gehäusematerial UL94V-0 klassifiziert  
Ø 1.2±0.05  
Standard packaging taped in ammo pack  
Standard Lieferform gegurtet in Ammo-Pack  
Dimensions - Maße [mm]  
Maximum ratings  
Grenzwerte  
Type  
Typ  
Repetitive peak reverse voltage  
Periodische Spitzensperrspannung  
VRRM [V]  
Surge peak reverse voltage  
Stoßspitzensperrspannung  
VRSM [V]  
UF5400  
UF5401  
UF5402  
UF5403  
UF5404  
UF5405  
UF5406  
UF5407  
UF5408  
50  
100  
200  
300  
400  
500  
600  
800  
1000  
50  
100  
200  
300  
400  
500  
600  
800  
1000  
Max. average forward rectified current, R-load  
Dauergrenzstrom in Einwegschaltung mit R-Last  
TA = 50°C  
f > 15 Hz  
TA = 25°C  
TA = 25°C  
IFAV  
IFRM  
IFSM  
i2t  
3 A 1)  
Repetitive peak forward current  
Periodischer Spitzenstrom  
30 A 1)  
100/120 A  
50 A2s  
Peak forward surge current, 50/60 Hz half sine-wave  
Stoßstrom für eine 50/60 Hz Sinus-Halbwelle  
Rating for fusing, Grenzlastintegral, t < 10 ms  
Junction temperature – Sperrschichttemperatur  
Storage temperature – Lagerungstemperatur  
Tj  
TS  
-50...+175°C  
-50...+175°C  
1
Valid, if leads are kept at ambient temperature at a distance of 10 mm from case  
Gültig, wenn die Anschlussdrähte in 10 mm Abstand von Gehäuse auf Umgebungstemperatur gehalten werden  
© Diotec Semiconductor AG  
http://www.diotec.com/  
1
 

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