WTE
POWER SEMICONDUCTORS
Pb
UF2A – UF2M
2.0A SURFACE MOUNT GLASS PASSIVATED ULTRAFAST DIODE
Features
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Glass Passivated Die Construction
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Ideally Suited for Automatic Assembly
Low Forward Voltage Drop, High Efficiency
Surge Overload Rating to 50A Peak
Low Power Loss
Ultra-Fast Recovery Time
Plastic Case Material has UL Flammability
Classification Rating 94V-O
B
D
A
F
C
H
G
E
SMB/DO-214AA
Min
Mechanical Data
Dim
A
Max
3.94
4.70
2.11
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Case: SMB/DO-214AA, Molded Plastic
Terminals: Solder Plated, Solderable
per MIL-STD-750, Method 2026
3.30
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B
4.06
C
1.91
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Polarity: Cathode Band or Cathode Notch
Marking: Type Number
Weight: 0.093 grams (approx.)
Lead Free: For RoHS / Lead Free Version,
Add “-LF” Suffix to Part Number, See Page 4
D
0.152
5.08
0.305
5.59
2.44
0.203
1.27
E
F
2.13
G
H
0.051
0.76
All Dimensions in mm
Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified
Characteristic
Symbol
UF2A
UF2B
UF2D
UF2G
UF2J
UF2K
UF2M
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
50
35
100
70
200
140
400
600
420
800
560
1000
700
V
RMS Reverse Voltage
VR(RMS)
IO
280
2.0
V
A
Average Rectified Output Current @TL = 90°C
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed on
rated load (JEDEC Method)
IFSM
50
A
Forward Voltage
@IF = 2.0A
VFM
IRM
1.0
1.4
1.7
V
Peak Reverse Current
At Rated DC Blocking Voltage @TA = 100°C
@TA = 25°C
10
500
µA
Reverse Recovery Time (Note 1)
trr
Cj
50
100
nS
pF
Typical Junction Capacitance (Note 2)
Typical Thermal Resistance (Note 3)
Operating and Storage Temperature Range
50
20
RθJL
Tj, TSTG
°C/W
°C
-50 to +150
Note: 1. Measured with IF = 0.5A, IR = 1.0A, Irr = 0.25A. See figure 5.
2. Measured at 1.0 MHz and applied reverse voltage of 4.0 V DC.
3. Mounted on P.C. Board with 8.0mm2 land area.
UF2A – UF2M
1 of 4
© 2006 Won-Top Electronics