Datasheet > UESDXXDT5G

UESDXXDT5G

更新时间： 2024-09-26 03:14:39

品牌	Logo	应用领域
安森美 - ONSEMI		二极管
页数	文件大小	规格书
4页	58K
描述
ESD Protection Diodes

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

UESDXXDT5G 数据手册

mESD3.3DT5G SERIES

ESD Protection Diodes

In Ultra Small SOT−723 Package

The mESD Series is designed to protect voltage sensitive components

from ESD. Excellent clamping capability, low leakage, and fast response

time, make these parts ideal for ESD protection on designs where board

space is at a premium. Because of its small size, it is suited for use in

cellular phones, portable devices, digital cameras, power supplies and

many other portable applications.

http://onsemi.com

PIN 1. CATHODE

2. CATHODE

3. ANODE

Specification Features:

• Small Body Outline Dimensions:

0.047″ x 0.032″ (1.20 mm x 0.80 mm)

• Low Body Height: 0.020″ (0.5 mm)

• Stand−off Voltage: 3.3 V − 6.0 V

• Low Leakage

MARKING

DIAGRAM

• Response Time is Typically < 1 ns

• ESD Rating of Class 3 (> 16 kV) per Human Body Model

• IEC61000−4−2 Level 4 ESD Protection

• IEC61000−4−4 Level 4 EFT Protection

• These are Pb−Free Devices

xx M

SOT−723

CASE 631AA

STYLE 4

xx = Device Code

= Date Code

Mechanical Characteristics:

CASE: Void-free, transfer-molded, thermosetting plastic

Epoxy Meets UL 94 V−0

LEAD FINISH: 100% Matte Sn (Tin)

MOUNTING POSITION: Any

QUALIFIED MAX REFLOW TEMPERATURE: 260°C

Device Meets MSL 1 Requirements

ORDERING INFORMATION

†

Device

mESDxxDT5G

Package

Shipping

SOT−723 8000/Tape & Reel

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

MAXIMUM RATINGS

Rating

IEC 61000−4−2 (ESD)

Symbol

Value

Unit

Air

Contact

DEVICE MARKING INFORMATION

IEC 61000−4−4 (EFT)

See specific marking information in the device marking

column of the table on page 2 of this data sheet.

ESD Voltage

Per Human Body Model

Per Machine Model

400

Total Power Dissipation on FR−5 Board

⎪

mW/°C

°C/W

(Note 1) @ T = 25°C

240

1.9

525

Derate above 25°C

Thermal Resistance Junction−to−Ambient

Junction and Storage Temperature Range

T , T

−55 to

+150

°C

stg

Lead Solder Temperature − Maximum

(10 Second Duration)

260

°C

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. FR−5 = 1.0 x 0.75 x 0.62 in.

Publication Order Number:

October, 2006 − Rev. 1

mESD3.3DT5G/D

12 3 4

中文翻译

下载PDF

与UESDXXDT5G相关器件

型号	品牌	获取价格	描述	数据表
UESP04D	GULFSEMI	获取价格	Ultra fast Plastic Power Rectifiers VOLTAGE: 200V CURRENT: 4.0A
UESP05D	GULFSEMI	获取价格	Ultra fast Plastic Power Rectifiers VOLTAGE: 200V CURRENT: 5.0A
UESP05F	GULFSEMI	获取价格	Ultra fast Plastic Power Rectifiers VOLTAGE: 300V CURRENT: 5.0A
UESP05J	GULFSEMI	获取价格	Ultra fast Plastic Power Rectifiers VOLTAGE: 600V CURRENT: 5.0A
UESP05K	GULFSEMI	获取价格	Ultra fast Plastic Power Rectifiers VOLTAGE: 800V CURRENT: 5.0A
UESP06G	GULFSEMI	获取价格	Ultra fast Plastic Power Rectifiers VOLTAGE: 400V CURRENT: 6.0A
UESP06J	GULFSEMI	获取价格	Ultra fast Plastic Power Rectifiers VOLTAGE: 600V CURRENT:6.0A
UESP08D	GULFSEMI	获取价格	Ultra fast Plastic Power Rectifiers VOLTAGE: 200V CURRENT:8.0A
UESP08G	GULFSEMI	获取价格	Ultra fast Plastic Power Rectifiers VOLTAGE: 400V CURRENT:8.0A
UESP08J	GULFSEMI	获取价格	Ultra fast Plastic Power Rectifiers VOLTAGE: 600V CURRENT:8.0A

与UESDXXDT5G相关文章

塔塔电子与力积电达成技术转让协议，携手建设印度首座晶圆厂
2024-09-29

9
英特尔震撼发布：128核心256线程的至强6性能核处理器
2024-09-29

8
SK海力士量产12层HBM3E，容量高达36GB
2024-09-27

12
意法半导体传感器驱动Sphere，开启沉浸式电影新时代
2024-09-27

19

产品中心

服务支持

精选活动

关于我们

帮助中心

UESDXXDT5G

UESDXXDT5G 数据手册

与UESDXXDT5G相关器件

与UESDXXDT5G相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

UESDXXDT5G

UESDXXDT5G 数据手册

与UESDXXDT5G相关器件

与UESDXXDT5G相关文章

您还可以找

您在本页遇到什么问题？