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U634H256BSC35 PDF预览

U634H256BSC35

更新时间: 2024-01-16 19:34:22
品牌 Logo 应用领域
SIMTEK 静态存储器光电二极管内存集成电路
页数 文件大小 规格书
14页 241K
描述
32KX8 NON-VOLATILE SRAM, 35ns, PDSO32, 0.300 INCH, SOP-32

U634H256BSC35 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
包装说明:SOP, SOP32,.4Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8542.32.00.41
风险等级:5.61最长访问时间:35 ns
JESD-30 代码:R-PDSO-G32JESD-609代码:e0
长度:20.725 mm内存密度:262144 bit
内存集成电路类型:NON-VOLATILE SRAM内存宽度:8
功能数量:1端子数量:32
字数:32768 words字数代码:32000
工作模式:ASYNCHRONOUS最高工作温度:70 °C
最低工作温度:组织:32KX8
封装主体材料:PLASTIC/EPOXY封装代码:SOP
封装等效代码:SOP32,.4封装形状:RECTANGULAR
封装形式:SMALL OUTLINE并行/串行:PARALLEL
峰值回流温度(摄氏度):NOT SPECIFIED电源:5 V
认证状态:Not Qualified座面最大高度:2.54 mm
最大待机电流:0.003 A子类别:SRAMs
最大压摆率:0.075 mA最大供电电压 (Vsup):5.5 V
最小供电电压 (Vsup):4.5 V标称供电电压 (Vsup):5 V
表面贴装:YES技术:CMOS
温度等级:COMMERCIAL端子面层:Tin/Lead (Sn85Pb15)
端子形式:GULL WING端子节距:1.27 mm
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
宽度:7.51 mm

U634H256BSC35 数据手册

 浏览型号U634H256BSC35的Datasheet PDF文件第1页浏览型号U634H256BSC35的Datasheet PDF文件第2页浏览型号U634H256BSC35的Datasheet PDF文件第3页浏览型号U634H256BSC35的Datasheet PDF文件第5页浏览型号U634H256BSC35的Datasheet PDF文件第6页浏览型号U634H256BSC35的Datasheet PDF文件第7页 
U634H256  
C-Type  
K-Type  
DC Characteristics  
Symbol  
Conditions  
Unit  
Min. Max. Min. Max.  
VCC  
IOH  
IOL  
= 4.5 V  
=-4 mA  
= 8 mA  
Output High Voltage  
Output Low Voltage  
VOH  
VOL  
2.4  
8
2.4  
8
V
V
0.4  
-4  
0.4  
-4  
VCC  
VOH  
VOL  
= 4.5 V  
= 2.4 V  
= 0.4 V  
Output High Current  
Output Low Current  
IOH  
IOL  
mA  
mA  
Input Leakage Current  
VCC  
= 5.5 V  
High  
Low  
IIH  
IIL  
VIH  
VIL  
= 5.5 V  
1
1
µA  
µA  
=
0 V  
-1  
-1  
-1  
-1  
Output Leakage Current  
VCC  
= 5.5 V  
High at Three-State- Output  
Low at Three-State- Output  
IOHZ  
IOLZ  
VOH  
VOL  
= 5.5 V  
1
1
µA  
µA  
=
0 V  
SRAM MEMORY OPERATIONS  
Symbol  
25  
35  
45  
Switching Characteristics  
No.  
Unit  
Read Cycle  
Alt.  
IEC  
Min. Max. Min. Max. Min. Max.  
1
2
3
4
5
6
7
8
9
Read Cycle Timef  
tAVAV  
tAVQV  
tELQV  
tcR  
25  
35  
45  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
Address Access Time to Data Validg  
Chip Enable Access Time to Data Valid  
ta(A)  
ta(E)  
ta(G)  
25  
25  
10  
10  
10  
35  
35  
15  
13  
13  
45  
45  
20  
15  
15  
Output Enable Access Time to Data Valid tGLQV  
E HIGH to Output in High-Zh  
G HIGH to Output in High-Zh  
E LOW to Output in Low-Z  
tEHQZ tdis(E)  
tGHQZ tdis(G)  
tELQX ten(E)  
tGLQX ten(G)  
5
0
3
0
5
0
3
0
5
0
3
0
G LOW to Output in Low-Z  
Output Hold Time after Address Change  
tAXQX  
tELICCH tPU  
tEHICCL tPD  
tv(A)  
10 Chip Enable to Power Activee  
11 Chip Disable to Power Standbyd, e  
25  
35  
45  
e: Parameter guaranteed but not tested.  
f: Device is continuously selected with E and G both LOW.  
g: Address valid prior to or coincident with E transition LOW.  
h: Measured ± 200 mV from steady state output voltage.  
184  
December 12, 1997  

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