5秒后页面跳转
U632H64SK45G1 PDF预览

U632H64SK45G1

更新时间: 2024-01-22 17:52:50
品牌 Logo 应用领域
SIMTEK 静态存储器光电二极管
页数 文件大小 规格书
15页 229K
描述
8KX8 NON-VOLATILE SRAM, 45ns, PDSO28, 0.330 INCH, GREEN, SOP1-28

U632H64SK45G1 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:SOIC
包装说明:SOP, SOP28,.5针数:28
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8542.32.00.41风险等级:5.61
最长访问时间:45 nsJESD-30 代码:R-PDSO-G28
JESD-609代码:e3长度:18.1 mm
内存密度:65536 bit内存集成电路类型:NON-VOLATILE SRAM
内存宽度:8功能数量:1
端子数量:28字数:8192 words
字数代码:8000工作模式:ASYNCHRONOUS
最高工作温度:85 °C最低工作温度:-40 °C
组织:8KX8封装主体材料:PLASTIC/EPOXY
封装代码:SOP封装等效代码:SOP28,.5
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
并行/串行:PARALLEL峰值回流温度(摄氏度):NOT SPECIFIED
电源:5 V认证状态:Not Qualified
座面最大高度:2.54 mm最大待机电流:0.003 A
子类别:SRAMs最大压摆率:0.08 mA
最大供电电压 (Vsup):5.5 V最小供电电压 (Vsup):4.5 V
标称供电电压 (Vsup):5 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子节距:1.27 mm端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED宽度:8.75 mm

U632H64SK45G1 数据手册

 浏览型号U632H64SK45G1的Datasheet PDF文件第1页浏览型号U632H64SK45G1的Datasheet PDF文件第3页浏览型号U632H64SK45G1的Datasheet PDF文件第4页浏览型号U632H64SK45G1的Datasheet PDF文件第5页浏览型号U632H64SK45G1的Datasheet PDF文件第6页浏览型号U632H64SK45G1的Datasheet PDF文件第7页 
U632H64  
Block Diagram  
VCCX  
VSS  
EEPROM Array  
128 x (64 x 8)  
VCAP  
STORE  
A5  
A6  
A7  
A8  
A9  
A11  
A12  
SRAM  
RECALL  
VCCX  
VCAP  
Power  
Array  
Control  
128 Rows x  
64 x 8 Columns  
Store/  
Recall  
Control  
HSB  
DQ0  
DQ1  
DQ2  
DQ3  
DQ4  
DQ5  
DQ6  
Column I/O  
Software  
Detect  
A0 - A12  
Column Decoder  
G
A0 A1 A2 A3 A4A10  
DQ7  
E
W
Truth Table for SRAM Operations  
Operating Mode  
E
HSB  
W
G
DQ0 - DQ7  
Standby/not selected  
Internal Read  
Read  
H
L
L
L
H
H
H
H
High-Z  
High-Z  
*
*
H
H
H
L
L
Data Outputs Low-Z  
Data Inputs High-Z  
Write  
*
* H or L  
Characteristics  
All voltages are referenced to VSS = 0 V (ground).  
All characteristics are valid in the power supply voltage range and in the operating temperature range specified.  
Dynamic measurements are based on a rise and fall time of 5 ns, measured between 10 % and 90 % of VI, as well as input levels of VIL = 0 V  
and VIH = 3 V. The timing reference level of all input and output signals is 1.5 V,  
with the exception of the tdis-times and ten-times, in which cases transition is measured ± 200 mV from steady-state voltage.  
Absolute Maximum Ratingsa  
Symbol  
Min.  
Max.  
Unit  
Power Supply Voltage  
Input Voltage  
VCC  
VI  
-0.5  
-0.3  
-0.3  
7
V
V
VCC+0.5  
VCC+0.5  
1
Output Voltage  
VO  
PD  
Ta  
V
Power Dissipation  
W
Operating Temperature  
C-Type  
K-Type  
0
70  
85  
°C  
°C  
-40  
Storage Temperature  
Tstg  
-65  
150  
°C  
a: Stresses greater than those listed under „Absolute Maximum Ratings“ may cause permanent damage to the device. This is a stress  
rating only, and functional operation of the device at condition above those indicated in the operational sections of this specification is  
not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability  
2
April 7, 2005  

与U632H64SK45G1相关器件

型号 品牌 描述 获取价格 数据表
U633H04BD1C25 CYPRESS Non-Volatile SRAM, 512X8, 25ns, CMOS, PDIP28, 0.600 INCH, PLASTIC, DIP-28

获取价格

U633H04BD1C45 CYPRESS 512X8 NON-VOLATILE SRAM, 45ns, PDIP28, 0.600 INCH, PLASTIC, DIP-28

获取价格

U633H04BD1C45G1 CYPRESS 512X8 NON-VOLATILE SRAM, 45ns, PDIP28, 0.600 INCH, PLASTIC, DIP-28

获取价格

U633H04BD1K25 CYPRESS 512X8 NON-VOLATILE SRAM, 25ns, PDIP28, 0.600 INCH, PLASTIC, DIP-28

获取价格

U633H04BD1K25G1 CYPRESS 512X8 NON-VOLATILE SRAM, 25ns, PDIP28, 0.600 INCH, PLASTIC, DIP-28

获取价格

U633H04BD1K45 CYPRESS Non-Volatile SRAM, 512X8, 45ns, CMOS, PDIP28, 0.600 INCH, PLASTIC, DIP-28

获取价格