Datasheet > U630H16BDK25

U630H16BDK25

更新时间： 2023-06-15 00:00:00

品牌	Logo	应用领域
SIMTEK		静态存储器光电二极管
页数	文件大小	规格书
14页	225K
描述
Non-Volatile SRAM, 2KX8, 25ns, CMOS, PDIP28, 0.300 INCH, PLASTIC, DIP-28

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数据手册

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U630H16BDK25 数据手册

U630H16

V_IL, W = NE = V_IH)

Read Cycle 1: Ai-controlled (during Read cycle: E

t_cR

(1)

Address Valid

(2)

t_a(A)

DQi

Output Data Valid

Previous Data Valid

t_v(A)

Output

(9)

Read Cycle 2: G-, E-controlled (during Read cycle: W = NE = V_IH)^g

t_cR

(1)

Address Valid

t_a(A)

(2)

t_a(E)

(3)

t_dis(E)

(5)

t_en(E)

(7)

t_a(G)

(4)

t_{dis(G) (6)}

t_en(G)

(8)

DQi

High Impedance

Output Data Valid

t_PD

Output

_PU(10)

(11)

ACTIVE

I_CC

STANDBY

Symbol

Switching Characteristics

Write Cycle

No.

Unit

Alt. #1 Alt. #2 IEC Min. Max. Min. Max. Min. Max.

12 Write Cycle Time

t_AVAV

t_cW

13 Write Pulse Width

t_WLWH

t_w(W)

14 Write Pulse Width Setup Time

15 Address Setup Time

t_WLEHt_su(W)

t_AVWL

t_AVEL

t_su(A)

t_su(A-WH)

t_su(E)

16 Address Valid to End of Write

17 Chip Enable Setup Time

18 Chip Enable to End of Write

19 Data Setup Time to End of Write

20 Data Hold Time after End of Write

21 Address Hold after End of Write

22 W LOW to Output in High-Z^{h, i}

23 W HIGH to Output in Low-Z

t_AVWHt_AVEH

t_ELWH

t_ELE

t_w(E)

t_DVWHt_DVEH

t_WHDXt_EHDX

t_WHAXt_EHAX

t_WLQZ

t_su(D)

t_h(D)

t_h(A)

t_dis(W)

t_en(W)

t_WHQX

April 20, 2004

1 2 3 456 7 8...14

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