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TZX30-A PDF预览

TZX30-A

更新时间: 2023-01-03 09:46:31
品牌 Logo 应用领域
TEMIC /
页数 文件大小 规格书
8页 95K
描述
Zener Diode, 30V V(Z), 2.42%, 0.5W, Silicon, Unidirectional, DO-35,

TZX30-A 数据手册

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TZX...  
Silicon Epitaxial Planar Z–Diodes  
Features  
Very sharp reverse characteristic  
Low reverse current level  
Very high stability  
Low noise  
Available with tighter tolerances  
Applications  
94 9367  
Voltage stabilization  
Absolute Maximum Ratings  
T = 25 C  
j
Parameter  
Test Conditions  
l=4mm,  
Type  
Symbol  
Value  
500  
Unit  
mW  
Power dissipation  
P
V
T =25 C  
L
Z–current  
I
P /V  
mA  
C
Z
V
Z
Junction temperature  
Storage temperature range  
T
175  
j
T
stg  
–65...+175  
C
Maximum Thermal Resistance  
T = 25 C  
j
Parameter  
Test Conditions  
l=4mm, T =constant  
Symbol  
Value  
300  
Unit  
K/W  
Junction ambient  
R
thJA  
L
Characteristics  
T = 25 C  
j
Parameter  
Forward voltage  
Test Conditions  
I =200mA  
Type  
Symbol  
Min  
Typ  
Max  
1.5  
Unit  
V
V
F
F
TELEFUNKEN Semiconductors  
1 (8)  
Rev. A1, 10-Mar-97  

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