Datasheet > TZM5262B-GS18

TZM5262B-GS18

更新时间： 2024-01-15 00:46:50

品牌	Logo	应用领域
威世 - VISHAY		测试二极管
页数	文件大小	规格书
4页	46K
描述
Zener Diode, 51V V(Z), 5%, 0.5W,

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中文翻译

获取价格

数据手册

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TZM5262B-GS18 数据手册

TZM5221B...TZM5267B

Vishay Telefunken

Silicon Z–Diodes

Features

Very sharp reverse characteristic

Very high stability

Electrical data identical with the devices

1N5221B...1N5267B

Low reverse current level

V –tolerance ± 5%

94 9371

Applications

Voltage stabilization

Order Instruction

Type

Ordering Code

TZM5221B–GS08

TZM5221B–GS18

Remarks

Tape and Reel (2.500 pcs)

Tape and Reel (10.000 pcs)

TZM5221B

Absolute Maximum Ratings

T = 25 C

Parameter

Power dissipation

Z–current

Junction temperature

Storage temperature range

Test Conditions

<300K/W, T =25 C

Type

Symbol

Value

500

Unit

thJA

amb

P /V

175

–65...+175

stg

Maximum Thermal Resistance

T = 25 C

Parameter

Junction ambient

Test Conditions

on PC board 50 mmx50 mmx1.6 mm

Symbol

thJA

Value

500

Unit

K/W

Electrical Characteristics

T = 25 C

Parameter

Forward voltage

Test Conditions

I =200mA

Type

Symbol Min

Typ Max Unit

1.1

Document Number 85609

Rev. A3, 12-Mar-01

www.vishay.com

1 (4)

12 3 4

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