Datasheet > TSS40L

TSS40L

更新时间： 2024-02-24 07:24:41

品牌	Logo	应用领域
TSC		二极管光电二极管
页数	文件大小	规格书
2页	68K
描述
0.2Amp Surface Mount Schottky Barrier

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技术参数
数据手册

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TSS40L 技术参数

生命周期：	Not Recommended	包装说明：	R-PBCC-N2
Reach Compliance Code：	compliant	ECCN代码：	EAR99
风险等级：	5.82	配置：	SINGLE
二极管元件材料：	SILICON	二极管类型：	RECTIFIER DIODE
JESD-30 代码：	R-PBCC-N2	元件数量：	1
端子数量：	2	最高工作温度：	125 °C
最低工作温度：	-65 °C	最大输出电流：	0.2 A
封装主体材料：	PLASTIC/EPOXY	封装形状：	RECTANGULAR
封装形式：	CHIP CARRIER	最大功率耗散：	0.2 W
最大重复峰值反向电压：	40 V	最大反向恢复时间：	0.005 µs
表面贴装：	YES	技术：	SCHOTTKY
端子形式：	NO LEAD	端子位置：	BOTTOM

TSS40L 数据手册

TSS40L

0.2Amp Surface Mount Schottky Barrier

Diode

RoHS

COMPLIANCE

1005

Features

Designed for mounting on small surface

Extremely thin/leadless package

Low capacitance

Low forward voltage drop

High temperature soldering:

260^oC/10 seconds at terminals

Chip version in 1005

ITEM

1005

0.102(2.60)

0.095(2.40)

0.051(1.30)

0.043(1.10)

0.035(0.90)

0.027(0.70)

0.020(0.50)

Typical

Mechanical Data

Case: 1005 Standard package, molded plastic

Terminals: Gold plated, solderable per

MIL-STD-750, method 2026.

Polarity: Indicated by cathode band

Mounting position: Any

Package code: RW

0.040(1.00)

Typical

Weight: 0.006 gram (approximately)

Dimensions in inches and (millimeters)

Maximum Ratings T =25 ^oC unless otherwise specified

Type Number

Symbol

1005

Units

Repetitive Peak Reverse Voltage

V_RRM

Reverse Voltage

V_R

V_R(RMS)

I_O

200

RMS Reverse Voltage

Average Forward Current

Peak Forward Surge Current

8.3ms single half sine-wave superimposed on

rate load (JEDEC method)

I_FSM

600

Power Dissipation

V_F

I_R

200

0.38

1.0

Forward Voltage

IF=1.0mA

IF=40mA

Reverse Leakage Current VR=30V

0.2

Typical capacitance between terminals

VR=0V, f =1.0MHz reverse voltage

Reverse Recovery Time

(IF=IR=10mA, Irr=0.1x IR, RL=100Ώ)

Junction Temperature

C_J

Trr

T_J

T_STG

-65 to + 125

^oC

Storage Temperature

Version: A07

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