Datasheet > TSM70N600CIC0G

TSM70N600CIC0G

更新时间： 2022-02-26 11:20:11

品牌	Logo	应用领域
TSC		/
页数	文件大小	规格书
10页	1081K
描述
N-Channel Power MOSFET

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TSM70N600CIC0G 数据手册

TSM70N600

Taiwan Semiconductor

N-Channel Power MOSFET

700V, 8A, 0.6Ω

FEATURES

KEY PERFORMANCE PARAMETERS

●

Super-Junction technology

PARAMETER

VALUE

UNIT

High performance due to small figure-of-merit

High ruggedness performance

V_DS

R_DS(on)(max)

Q_g

700

0.6

Ω

High commutation performance

12.6

APPLICATION

●

Power Supply

●

Lighting

ITO-220

TO-251 (IPAK)

TO-252 (DPAK)

Notes: Moisture sensitivity level: level 3. Per J-STD-020

ABSOLUTE MAXIMUM RATINGS (T_A= 25°C unless otherwise noted)

PARAMETER

SYMBOL

ITO-220

IPAK/DPAK

UNIT

Drain-Source Voltage

Gate-Source Voltage

V_DS

700

V_GS

±30

T_C= 25°C

Continuous Drain Current ^{(Note 1)}

I_D

T_C= 100°C

4.8

Pulsed Drain Current ^{(Note 2)}

I_DM

P_DTOT

E_AS

Total Power Dissipation @ T_C= 25°C

Single Pulsed Avalanche Energy ^{(Note 3)}

Single Pulsed Avalanche Current ^{(Note 3)}

100

I_AS

Operating Junction and Storage Temperature Range

T_J, T_STG

- 55 to +150

°C

THERMAL PERFORMANCE

PARAMETER

SYMBOL

R_ӨJC

ITO-220

IPAK/DPAK

UNIT

°C/W

Junction to Case Thermal Resistance

3.9

1.5

Junction to Ambient Thermal Resistance

R_ӨJA

Notes: R_ӨJAis the sum of the junction-to-case and case-to-ambient thermal resistances. The case thermal reference is defined

at the solder mounting surface of the drain pins. R_ӨJAis guaranteed by design while R_ӨCAis determined by the user’s board

design. R_ӨJAshown below for single device operation on FR-4 PCB in still air.

Document Number: DS_P0000138

Version: C15

12 3 4 5 6 7...10

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