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TSM70N10CHC5G PDF预览

TSM70N10CHC5G

更新时间: 2022-02-26 11:20:11
品牌 Logo 应用领域
TSC /
页数 文件大小 规格书
8页 489K
描述
100V N-Channel Power MOSFET

TSM70N10CHC5G 数据手册

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TSM70N10  
100V N-Channel Power MOSFET  
TO-252  
(DPAK)  
TO-251  
(IPAK)  
Key Parameter Performance  
Pin Definition:  
1. Gate  
2. Drain  
Parameter  
VDS  
Value  
100  
Unit  
V
3. Source  
RDS(on)(max)  
Qg  
13  
m  
nC  
145  
TO-251S  
(IPAK SL)  
Ordering Information  
Block Diagram  
Part No.  
Package  
TO-252  
Packing  
2.5kpcs / 13” Reel  
75pcs / Tube  
TSM70N10CP ROG  
TSM70N10CH C5G  
TSM70N10CH X0G  
TO-251  
TO-251S  
75pcs / Tube  
Note: “G” denotes for Halogen- and Antimony-free as those which contain  
<900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and  
<1000ppm antimony compounds.  
N-Channel MOSFET  
Absolute Maximum Ratings (TA=25oC unless otherwise noted)  
Parameter  
Symbol  
Limit  
Unit  
V
Drain-Source Voltage  
Gate-Source Voltage  
TC=25°C  
VDS  
VGS  
100  
±20  
V
70  
TC=70°C  
Continuous Drain Current (Note 3)  
TA=25°C  
61  
A
ID  
12  
TA=70°C  
9
150  
Drain Current-Pulsed (Note 1)  
IDM  
A
A
Avalanche Current, L=0.5mH  
Avalanche Energy, L=0.5mH  
TC=25°C  
IAS, IAR  
EAS, EAR  
25  
156  
mJ  
120  
TC=70°C  
Maximum Power Dissipation (Note 2)  
TA=25°C  
80  
PD  
W
8.3  
TA=70°C  
Storage Temperature Range  
5.3  
TSTG  
TJ  
-55 to +150  
-55 to +150  
°C  
°C  
Operating Junction Temperature Range  
1/8  
Version: D14  

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