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TSL213 PDF预览

TSL213

更新时间: 2024-10-01 03:26:15
品牌 Logo 应用领域
德州仪器 - TI 光电传感器
页数 文件大小 规格书
8页 159K
描述
64 】 1 INTEGRATED OPTO SENSOR

TSL213 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Obsolete包装说明:PLASTIC, DIP-8
Reach Compliance Code:not_compliantFactory Lead Time:1 week
风险等级:5.8应用:GENERAL PURPOSE
配置:COMPLEX红外线范围:NO
安装特点:THROUGH HOLE MOUNT功能数量:1
最高工作温度:70 °C最低工作温度:
光电设备类型:LINEAR OUTPUT PHOTO IC形状:RECTANGULAR
子类别:Photo ICs最大压摆率:0.009 mA
最小供电电压:4.5 V标称供电电压:5 V
表面贴装:NO

TSL213 数据手册

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TSL213  
64 × 1 INTEGRATED OPTO SENSOR  
SOES009A – D4059, NOVEMBER 1992 – REVISED AUGUST 1993  
Contains 64-Bit Static Shift Register  
(TOP VIEW)  
Contains Analog Buffer With Sample and  
Hold for Analog Output Over Full Clock  
Period  
SI  
CLK  
AO  
V
DD  
1
2
3
4
8
7
6
5
GND  
GND  
NC  
V
Single-Supply Operation  
DD  
NC – No internal connection  
Operates With 500-kHz Shift Clock  
8-Pin Clear Plastic DIP Package  
Advanced LinCMOS Technology  
description  
The TSL213 integrated opto sensor consists of 64 charge-mode pixels arranged in a 64 × 1 linear array. Each  
pixel measures 120 µm × 70 µm with 125-µm center-to-center spacing. Operation is simplified by internal logic  
requiring only clock and start-integration-pulse signals.  
The TSL213 is intended for use in a wide variety of applications including linear and rotary encoding, linear  
positioning, edge and mark detection, and contact imaging.  
The TSL213 is supplied in an 8-pin dual-in-line clear plastic package.  
functional block diagram  
V
DD  
8
1
2
3
64 Pixels  
Sense  
Node  
Pixel  
Buffer  
Sample  
and  
Hold  
Differential  
Amplifier  
Output  
Buffer  
3
AO  
Dark Pixel  
Reference  
Generator  
Pixel  
Buffer  
Pixel Selector Switch  
S2 S3  
R
L
S1  
Q1  
S64  
Q64  
(external load)  
Nonoverlapping  
Clock Generator  
Reset  
Q2  
Q3  
2
1
CLK  
SI  
64-Bit Shift Register  
Clock  
Generator  
Caution. These devices have limited built-in gate protection. The leads should be shorted together or the device placed in conductive  
foam during storage or handling to prevent electrostatic damage to the MOS gates.  
Advanced LinCMOS is a trademark of Texas Instruments Incorporated.  
Copyright 1993, Texas Instruments Incorporated  
PRODUCTION DATA information is current as of publication date.  
Products conform to specifications per the terms of Texas Instruments  
standard warranty. Production processing does not necessarily include  
testing of all parameters.  
1
POST OFFICE BOX 655303 DALLAS, TEXAS 75265  

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