Datasheet > TSH251CT

TSH251CT

更新时间： 2022-02-26 11:01:57

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描述
Micropower CMOS Output Hall Effect Switch

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TSH251CT 数据手册

TSH251

Micropower CMOS Output Hall Effect Switch

TO-92S

TSOT-23

Pin Definition:

1. V_CC

Pin Definition:

1. V_CC

2. GND

3. Output

2. Output

3. GND

Description

TSH251 Hall-effect sensor is a temperature stable, stress-resistant, Low Tolerance of Sensitivity micro-power

switch. Superior high-temperature performance is made possible through a dynamic offset cancellation that

utilizes chopper-stabilization. This method reduces the offset voltage normally caused by device over molding,

temperature dependencies, and thermal stress. TSH251 is special made for low operation voltage at 1.65V, to

active the chip which is includes the following on a single silicon chip: voltage regulator, Hall voltage generator,

small-signal amplifier, chopper stabilization, Schmitt trigger, CMOS output driver. Advanced CMOS wafer

fabrication processing is used to take advantage of low-voltage requirements, component matching, very low

input-offset errors, This device requires the presence of omni-polar magnetic fields for operation.

Features

Ordering Information

●

CMOS Hall IC Technology

Strong RF noise protection

1.65 to 3.5V for battery-powered applications

Omni polar, output switches with absolute value of

North or South pole from magnet

Part No.

Package

Packing

TSH251CT B0G

TSH251CX RFG

TO-92S

1kpcs / Bulk Bag

3kpcs / 7” Reel

TSOT-23

Note: “G” denote for Halogen Free Product

●

Operation down to 1.65V, micropower consumption

High Sensitivity for reed switch replacement

applications

Low sensitivity drift in crossing of Temp. range

Ultra Low power consumption at 5µA (avg.)

High ESD Protection, HBM > ±4KV( min )

Totem-pole output

Application

●

Solid state switch, Water Meter, Floating Meter

Handheld Wireless Handset Awake Switch

(Flip Cell/PHS Phone/Note Book/Flip Video Set)

Lid close sensor for battery powered devices

Magnet proximity sensor for reed switch

●

replacement in low duty cycle applications

Absolute Maximum Ratings (T_A=25^oC unless otherwise noted)

Characteristics

Supply voltage

Limit

V_DD

Value

4.5

Unit

Output Voltage

4.5

V_OUT

Reverse Voltage

Magnetic flux density

-0.3

V_DD/OUT

Unlimited

-40 to +85

Gauss

^oC

Output current

Operating temperature range

I_OUT

T_OPR

Storage temperature range

Maximum Junction Temp

-65 to +150

150

T_STG

T_J

206

TO-92S

Thermal Resistance - Junction to Ambient

TSOT-23

R_θJA

R_θJC

P_D

^oC/W

543

148

TO-92S

Thermal Resistance - Junction to Case

TSOT-23

410

606

TO-92S

Package Power Dissipation

230

TSOT-23

Note: Exceeding the absolute maximum ratings may cause permanent damage. Exposure to absolute maximum-

rated conditions for extended periods may affect device reliability.

1/8

Version: B14

12 3 4 5 6 7 8

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