Datasheet > TSC5302D

TSC5302D

更新时间： 2024-09-29 22:49:31

品牌	Logo	应用领域
TSC		晶体二极管晶体管高压
页数	文件大小	规格书
5页	106K
描述
High Voltage NPN Transistor with Diode

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TSC5302D 数据手册

Preliminary

TSC5302D

High Voltage NPN Transistor with Diode

Pin assignment:

BV_CEO= 400V

1. Base

2. Collector

3. Emitter

BV_CBO= 800V

Ic = 2A

V_{CE (SAT)}, = 1.0V @ Ic / Ib = 1A / 0.2A

Features

Ordering Information

ꢀ

Built-in free-wheeling diode makes efficient anti

Part No.

TSC5302DCH

TSC5302DCP

Packing

Tube

Package

TO-251

saturation operation.

ꢀ

No need to interest an hfe value because of low variable

storage-time spread even though comer spirit product.

Low base drive requirement.

T&R

TO-252

ꢀ

Block Diagram

ꢀ

Suitable for half bridge light ballast applications.

Structure

ꢀ

Silicon triple diffused type.

ꢀ

NPN silicon transistor with Diode

Absolute Maximum Rating (Ta = 25 ^oC unless otherwise noted)

Parameter

Symbol

Limit

Unit

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

V_CBO

V_CEO

V_EBO

I_C

800V

400V

Pulse

Base Current

I_B

Pulse

TO-251

TO-252

Collector Power Dissipation (Tc=25 ^oC)

P_D

1.5

Operating Junction Temperature

T_J

+150

- 65 to +150

6.25

^oC

Operating Junction and Storage Temperature Range

Thermal Resistance Junction to Case

T_STG

RΘjc

RΘja

^oC/W

Thermal Resistance Junction to Ambient

100

Note: 1. Single pulse, Pw = 300uS, Duty <= 2%

TS5302D Preliminary

1-1

2004/09 rev. A

12 3 4 5

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