Datasheet > TSC5303DCHC5G

TSC5303DCHC5G

更新时间： 2024-10-01 01:11:23

品牌	Logo	应用领域
TSC		/
页数	文件大小	规格书
6页	1039K
描述
High Voltage NPN Transistor with Diode

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技术参数
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TSC5303DCHC5G 技术参数

生命周期：	Not Recommended	包装说明：	,
Reach Compliance Code：	compliant	风险等级：	5.74
Base Number Matches：	1

TSC5303DCHC5G 数据手册

TSC5303D

High Voltage NPN Transistor with Diode

TO-251

(IPAK)

TO-252

(DPAK)

Pin Definition:

1. Base

PRODUCT SUMMARY

BV_CEO

BV_CBO

I_C

400V

2. Collector

3. Emitter

700V

V_CE(SAT)

0.17V @ I_C=1A, I_B=0.25A

Features

Block Diagram

●

Build-in Free-wheeling Diode Makes Efficient Anti-

saturation Operation

●

No Need to Interest an h_FEValue Because of Low

Variable Storage-time Spread Even Though Comer

Spirit Product.

●

Low Base Drive Requirement

Suitable for Half Bridge Light Ballast Application

Structure

●

Silicon Triple Diffused Type

NPN Silicon Transistor

Integrated Anti-parallel Collector-Emitter Diode

Ordering Information

Part No.

Package

Packing

2.5kpcs / 13” Reel

75pcs / Tube

TSC5303DCP ROG

TSC5303DCH C5G

TO-252

TO-251

Note: “G” denotes Halogen Free Products

Absolute Maximum Ratings (Ta = 25^oC unless otherwise noted)

Parameter

Symbol

Limit

Unit

Collector-Base Voltage

V_CBO

V_CES

V_CEO

V_EBO

I_C

700

Collector-Emitter Voltage @ V_BE=0V

Collector-Emitter Voltage

Emitter-Base Voltage

700

400

Collector Current

Collector Peak Current (tp <5ms)

Base Current

I_CM

I_B

1.5

Base Peak Current (tp <5ms)

Power Total Dissipation @ T_C=25ºC

Maximum Operating Junction Temperature

Storage Temperature Range

I_BM

P_DTOT

T_J

^oC

+150

T_STG

-55 to +150

1/6

Version: C14

12 3 4 5 6

中文翻译

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