Datasheet > TRS6E65F

TRS6E65F

更新时间： 2023-12-06 20:04:06

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
6页	286K
描述
650 V/6 A SiC Schottky Barrier Diode, TO-220-2L

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TRS6E65F 数据手册

TRS6E65F

SiC Schottky Barrier Diode

TRS6E65F

1. Applications

•

Power Factor Correction

Solar Inverters

Uninterruptible Power Supplies

DC-DC Converters

2. Features

(1) Chip design of 2nd generation.

(2) High surge current capability : IFSM = 55A (Max)

(3) The junction capacitance is small : Cj = 22 pF (Typ.)

(4) The reverse current is small. : IR = 0.3 µA (Typ.)

3. Packaging and Internal Circuit

1: Cathode

2: Anode

TO-220-2L

Start of commercial production

2016-07

2018-06-27

Rev.2.0

Toshiba Electronic Devices & Storage Corporation

12 3 4 5 6

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