Datasheet > TRS6E65H

TRS6E65H

更新时间： 2024-11-06 14:56:19

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
7页	423K
描述
650 V/6 A SiC Schottky Barrier Diode, TO-220F-2L

阅读下载

中文翻译

获取价格

如果您发现信息不准确，欢迎纠错

TRS6E65H 数据手册

TRS6E65H

SiC Schottky Barrier Diode

TRS6E65H

1. Applications

•

Power Factor Correction

Solar Inverters

Uninterruptible Power Supplies

DC-DC Converters

2. Features

(1) Chip design of 3rd generation

(2) Low forward voltage : VF = 1.2 V (typ.)

(3) Low total capacitive charge: Qc = 17 nC (typ.)

(4) Low reverse current: IR = 1.1 µA (typ.)

3. Packaging and Internal Circuit

1: Cathode

2: Anode

TO-220-2L

Start of commercial production

2023-05

2023-04-11

Rev.1.0

Toshiba Electronic Devices & Storage Corporation

12 3 4 5 6 7

中文翻译

下载PDF

型号	品牌	获取价格	描述	数据表
TRS6V65H	TOSHIBA	获取价格	650 V/6 A SiC Schottky Barrier Diode, DFN8×8
TRS7006	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 700V V(BR)CEO \| 1A I(C) \| TO-66
TRS-7010AC-EMG	OPTOWAY	获取价格	Transceiver,
TRS-7010ACFG	OPTOWAY	获取价格	Transceiver,
TRS-7010ACTG	OPTOWAY	获取价格	Transceiver,
TRS-7010AFG	OPTOWAY	获取价格	Transceiver,
TRS-7010AG	OPTOWAY	获取价格	5V / 1310 nm / 1.25 Gbps RoHS Compliant Optical Single-Mode Transceiver
TRS-7010ATG	OPTOWAY	获取价格	Transceiver,
TRS-7010C-EMG	OPTOWAY	获取价格	Transceiver,
TRS-7010CFG	OPTOWAY	获取价格	Transceiver,