Datasheet > TRS12N65FB

TRS12N65FB

更新时间： 2024-09-27 14:57:51

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
6页	299K
描述
650 V/12 A SiC Schottky Barrier Diode, TO-247

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TRS12N65FB 数据手册

TRS12N65FB

SiC Schottky Barrier Diode

TRS12N65FB

1. Applications

•

Power Factor Correction

Solar Inverters

Uninterruptible Power Supplies

DC-DC Converters

2. Features

(1) Chip design of 2nd generation

(2) High non-repetitive peak forward surge current: IFSM (Per Leg) / (Both Legs) = 52 A / 104 A

(3) Low junction capacitance: Cj (Per Leg) = 23 pF (typ.)

(4) Low reverse current: IR (Per Leg) = 0.3 µA (typ.)

3. Packaging and Internal Circuit

1: Anode

2: Cathode (heatsink)

3: Anode

TO-247

Start of commercial production

2020-07

2020-07-03

Rev.1.0

Toshiba Electronic Devices & Storage Corporation

12 3 4 5 6

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型号	品牌	获取价格	描述	数据表
TRS12V65H	TOSHIBA	获取价格	650 V/12 A SiC Schottky Barrier Diode, DFN8×8
TRS1404	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 140V V(BR)CEO \| 400MA I(C) \| TO-5
TRS1405	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 140V V(BR)CEO \| 400MA I(C) \| TO-37VAR
TRS150-12	TTELEC	获取价格	Enclosed Power Supply 12V 150 Watt
TRS150-15	TTELEC	获取价格	Enclosed Power Supply 15V 150 Watt
TRS150-24	TTELEC	获取价格	Enclosed Power Supply 24V 150 Watt
TRS150-36	TTELEC	获取价格	Enclosed Power Supply 36V 147.6 Watt
TRS150-48	TTELEC	获取价格	Enclosed Power Supply 48V 148.8 Watt
TRS1604	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 160V V(BR)CEO \| 400MA I(C) \| TO-5
TRS1605	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 160V V(BR)CEO \| 400MA I(C) \| TO-37VAR