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TQPED PDF预览

TQPED

更新时间: 2024-09-30 03:26:35
品牌 Logo 应用领域
TRIQUINT 放大器
页数 文件大小 规格书
3页 100K
描述
Precision, 100UA Gain Selectable Amplifier

TQPED 数据手册

 浏览型号TQPED的Datasheet PDF文件第2页浏览型号TQPED的Datasheet PDF文件第3页 
Pre-Production Process  
TQPED  
0.5 um E/D pHEMT Foundry Service  
Features  
E-Mode, 0.35 V, Vth  
Metal 2 - 4um  
D-Mode, -0.8 V Vp  
InGaAs Active Layer pHEMT  
Process  
Metal 2  
Metal 1  
Dielectric  
Metal 1  
Dielectric  
0.5 um Optical Lithography  
Gates  
High Density Interconnects:  
Metal 1 - 2um  
Dielectric  
NiCr  
MIM Metal  
2 Global  
1 Local  
Metal 0  
Nitride  
Isolation Implant  
High-Q Passives  
N+  
Pseudomorphic  
Channel  
Thin Film Resistors  
High Value Capacitors  
Backside Vias Optional  
Based on Production TQPHT  
pHEMT and Interconnect  
Nominal TOM3 FET Models  
Available  
MIM Capacitor  
NiCr Resistor  
E-Mode / D-Mode  
pHEMT  
Semi-Insulating GaAs Substrate  
0.5 um pHEMT Device Cross-Section  
General Description  
Applications  
TriQuint’s TQPED process is based on our production-released  
0.5 µm TQPHT process. TQPED partners an E-Mode pHEMT  
device with our TQPHT D-Mode transistors to be the first  
foundry pHEMT process to integrate E-Mode and D-Mode tran-  
sistors on the same wafer. This process is targeted for low noise  
amplifiers, linear, low loss and high isolation RF switch applica-  
tions, converters and integrated RF Front Ends. The TQPED  
process offers a D-Mode pHEMT with a –0.8 V pinch off, and an  
E-Mode pHEMT with a +0.35 V threshold voltage. The three  
metal interconnecting layers are encapsulated in a high perform-  
ance dielectric that allows wiring flexibility, optimized die size  
and plastic packaging simplicity. Precision NiCr resistors and  
high value MIM capacitors are included allowing higher levels of  
integration, while maintaining smaller, cost –effective die sizes.  
Highly Efficient, and Linear  
Power Amplifiers  
Low Loss, High Isolation, Low-  
Harmonic Contnt Switches  
Integrated digital control logic  
for Switches and Transceivers  
Converters  
Integrated RF Front Ends– LNA,  
SW, PA  
Wireless Transceivers, Base sta-  
tions, Direct Broadcast Satellite  
Radars, Digital Radios, RF /  
Mixed Signal ICs  
Power Detectors and Couplers  
Production Release: Q1’2005  
Page 1 of 3; Rev 1.0 12/1/2004  

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