Datasheet > TQPHT

TQPHT

更新时间： 2024-09-30 03:26:35

品牌	Logo	应用领域
TRIQUINT		/
页数	文件大小	规格书
5页	208K
描述
0.5 um pHEMT Foundry Service

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中文翻译

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TQPHT 数据手册

Production Process

TQPHT

0.5 um pHEMT Foundry Service

Features

•

D-Mode, -0.8 V Vp

InGaAs Active Layer pHEMT

Process

0.5 um Optical Lithography

Gates

Metal 2 - 4um

Metal 2

Metal 1

Dielectric

Metal 1

Dielectric

•

Metal 1 - 2um

•

17 V D-G Breakdown Voltage

High Density Interconnects:

Dielectric

NiCr

MIM Metal

•

2 Global

1 Local

Metal 0

Nitride

Isolation Implant

N+

Pseudomorphic

Channel

•

High-Q Passives

Thin Film Resistors

pHEMT

MIM Capacitor

NiCr Resistor

High Value Capacitors

Backside Vias Optional

Based on Production 0.25 µm

pHEMT and Passives Processes

TOM3 FET Models Available

Semi-Insulating GaAs Substrate

0.5 um pHEMT Device Cross-Section

•

General Description

Applications

TriQuint’s 0.5 µm pHEMT process is based on our production

released 0.25 µm gate process. TQPHT substitutes lower cost

optical lithography in place of e-beam and adds TriQuint’s

unique thick metal scheme. This process is targeted for high

efficiency and linearity in power amplifiers, low noise amplifiers,

and linear, low loss and high isolation RF switch applications.

The TQPHT process offers a D-Mode pHEMT with a –0.8 V

pinch off. The three metal interconnecting layers are encapsu-

lated in a high performance dielectric that allows wiring flexibil-

ity, optimized die size and plastic packaging simplicity. Precision

NiCr resistors and high value MIM capacitors are included al-

lowing higher levels of integration, while maintaining smaller,

cost –effective die sizes.

•

Highly Efficient and Linear

Power Amplifiers

Low Loss, High Isolation

Switches for Wireless Trans-

ceivers and Basestations

Higher Supply Voltage Applica-

tions

Integrated RF Front Ends–

LNA, SW, PA

•

Fully Released

Production Process

Page 1 of 5; Rev 2.0 7/22/03

12 3 4 5

中文翻译

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