Datasheet > TQHBT

TQHBT

更新时间： 2024-10-02 03:26:39

品牌	Logo	应用领域
TRIQUINT		放大器
页数	文件大小	规格书
5页	263K
描述
Precision, 100UA Gain Selectable Amplifier

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中文翻译

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数据手册

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TQHBT 数据手册

Production Process

TQHBT

InGaP HBT Foundry Service

Features

•

InGaP Emitter Process for High

Reliability and Thermal Stability

Base Etch Stop for Uniformity

MOCVD Epitaxy

High Linearity in PA applications

High Density Interconnects;

• 2 Global, 1 Local

Metal 2 - 4um

•

Dielectric

Metal 1 - 2um

• Over 6 µm Total Thickness

• Dielectric Encapsulated Metals

Thick Metal Interconnects:

• Enhanced Thermal Management

• Minimum Die Size

Dielectric

MIM

NiCr

Emitter

Base

•

Collector

Metal 0

Sub Collector

Buffer & Substrate

Isolation Implant

Effective Base Ballasting for

Maximum Gain

•

150 mm Wafers

High-Q Passives

TQHBT Process Cross-Section

NiCr Thin Film Resistors

High Value Capacitors

Backside Vias Optional

Validated Models and Design

Support

General Description

TriQuint’s TQHBT process is a highly reliable InGaP HBT

process with three levels of interconnecting metal. Thick

metal interconnects and high quality passives promote inte-

gration. The thick metal interconnects, which promote en-

hanced thermal management, and high density capacitors

keep die sizes small. MOCVD epitaxial processes are utilized

to grow the active layers. A carbon-doped Base and InGaP

Emitter are utilized for high RF performance consistent with

high reliability. Precision NiCr resistors and high value MIM

capacitors are included. The three metal layers are encapsu-

lated in a high performance dielectric that allows wiring flexi-

bility and plastic packaging simplicity.

Applications

•

Power Amplifiers

Driver Amplifiers

Wideband, General Purpose

Amplifiers

•

Gilbert Cell Mixers

VCOs

Single Supply and Easy Biasing

Semiconductors for Communications

www.triquint.com

TriQuint Semiconductor

2300 NE Brookwood Pkwy

Hillsboro, Oregon 97124

Phone: 503-615-9000

Fax: 503-615-8905

Email: info@triquint.com

Page 1 of 5; Rev 2.1 8/10/02

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