Datasheet > TQBL085N06T-3DL8

TQBL085N06T-3DL8

更新时间： 2024-04-09 19:01:05

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		/
页数	文件大小	规格书
6页	576K
描述
60V, N Channel MOSFETs

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数据手册

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TQBL085N06T-3DL8 数据手册

N-Channel Enhancement Mode MOSFET

TQBL085N06T-3DL8

2.2

V_DS= 10V

-55℃

1.8

1.6

1.4

1.2

V_GS= 10V; I_D= 20A

25℃

V_GS= 4.5V; I_D= 15A

175℃

0.8

0.6

-75 -50 -25

25 50 75 100 125 150 175

V_GS(V)

T_J(℃)

Fig 7 Normalized On-Resistance vs. Junction

Temperature

Fig 8 Transfer Characteristics

10000

f = 1 MHz

Ciss

V_DS= 15V；I_D= 20A

1000

100

Coss

Crss

0.1

100

V_DS(V)

Qg(nC)

Fig 9 Capacitance Characteristics

Fig 10 Gate-Charge Characteristics

1.05

1.03

1.01

0.99

0.97

0.95

1.2

1.1

0.9

0.8

0.7

0.6

0.5

0.4

I_D= 250uA

-75 -50 -25

25 50 75 100 125 150 175

-75 -50 -25

25 50 75 100 125 150 175

T_J(℃)

Fig 11 Normalized Breakdown Voltage

vs. Junction Temperature

Fig 12 Normalized V_GS(th)vs. Junction Temperature

MTM1358A: September 2023 [2.1]

www.gmesemi.com

1 2 345 6

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