Datasheet > TQBL6202PR

TQBL6202PR

更新时间： 2024-11-11 17:01:19

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		/
页数	文件大小	规格书
6页	594K
描述
60V, P Channel MOSFETs

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中文翻译

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数据手册

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TQBL6202PR 数据手册

P-Channel Enhancement Mode MOSFET

TQBL6202PR

Features



Advanced trench technology

Fast switching speed

HBM: AEC-Q101-001: H1B (JESD22-A114-B: 1B)

Halogen free

Qualified to AEC-Q101 standards for high reliability

Mechanical Data



Case: SOT-223

Molding Compound: UL Flammability Classification Rating 94V-0

Terminals: Matte tin-plated leads; solderability-per MIL-STD-202, Method 208

SOT-223

Ordering Information

Part Number

Package

SOT-223

Shipping Quantity

Marking Code

TQBL6202PR

4000 pcs / Tape & Reel

Maximum Ratings (@ T_A= 25°C unless otherwise specified)

Parameter

Drain-to-Source Voltage

Symbol

Value

Unit

V_DSS

V_GSS

-60

±20

Gate-to-Source Voltage

Continuous Drain Current (T_A= 25°C) ^*1

Continuous Drain Current (T_A= 70°C) ^*1

Pulsed Drain Current (t_p= 10μs, T_A= 25°C )

Single Pulse Avalanche Energy ^*3

Power Dissipation (T_A= 25°C) ^*1

Operating Junction Temperature Range

Storage Temperature Range

-2.9

I_D

-2.4

I_DM

E_AS

P_D

-20

°C

2.5

T_J

-55 ~ +175

T_STG

Thermal Characteristics

Parameter

Symbol

Min.

Typ.

Max.

Unit

Thermal Resistance Junction-to-Case

Thermal Resistance Junction-to-Air ^*1

R_θJC

R_θJA

°C /W

MTM1488A: November 2023 [2.0]

www.gmesemi.com

12 3 4 5 6

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