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TPV8200B PDF预览

TPV8200B

更新时间： 2024-09-30 22:19:15
品牌 Logo 应用领域
摩托罗拉 - MOTOROLA 晶体射频双极晶体管放大器局域网
页数 文件大小 规格书
8页 188K
描述
RF POWER TRANSISTOR NPN SILICON

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中文翻译

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TPV8200B 技术参数

生命周期：Obsolete包装说明：FLANGE MOUNT, R-CDFM-F4
Reach Compliance Code：unknownECCN代码：EAR99
风险等级：5.84外壳连接：EMITTER
最大集电极电流 (IC)：20 A集电极-发射极最大电压：30 V
配置：COMMON EMITTER, 2 ELEMENTS最小直流电流增益 (hFE)：30
最高频带：ULTRA HIGH FREQUENCY BANDJESD-30 代码：R-CDFM-F4
元件数量：2端子数量：4
最高工作温度：200 °C封装主体材料：CERAMIC, METAL-SEALED COFIRED
封装形状：RECTANGULAR封装形式：FLANGE MOUNT
极性/信道类型：NPN功耗环境最大值：250 W
最小功率增益 (Gp)：8 dB认证状态：Not Qualified
子类别：Other Transistors表面贴装：YES
端子形式：FLAT端子位置：DUAL
晶体管应用：AMPLIFIER晶体管元件材料：SILICON
Base Number Matches：1

TPV8200B 数据手册

 浏览型号TPV8200B的Datasheet PDF文件第2页浏览型号TPV8200B的Datasheet PDF文件第3页浏览型号TPV8200B的Datasheet PDF文件第4页浏览型号TPV8200B的Datasheet PDF文件第5页浏览型号TPV8200B的Datasheet PDF文件第6页浏览型号TPV8200B的Datasheet PDF文件第7页 
Order this document  
by TPV8200B/D  
SEMICONDUCTOR TECHNICAL DATA  
The RF Line  
Motorola Preferred Device  
The TPV8200B is designed for output stages in band IV and V TV transmitter  
amplifiers. It incorporates high value emitter ballast resistors, gold metalliza-  
tions and offers a high degree of reliability and ruggedness.  
Including input and output matching networks, the TPV8200B features high  
impedances. It can operate over the 470 MHz to 860 MHz bandwidth using a  
single fixed tuned circuit.  
190 W, 470–860 MHz  
RF POWER TRANSISTOR  
NPN SILICON  
•
•
To be used class AB for TV band IV and V.  
Specified 28 Volts, 860 MHz Characteristics  
Output Power = 190 Watts (peak sync.)  
Output Power = 150 Watts (CW)  
Gain = 8 dB Min  
•
Circuit board photomaster available upon request by contacting  
RF Tactical Marketing in Phoenix, AZ.  
CASE 375A–01, STYLE 1  
MAXIMUM RATINGS  
Rating  
Symbol  
Value  
30  
Unit  
Vdc  
Vdc  
Vdc  
Adc  
Collector–Emitter Voltage  
Collector–Base Voltage  
V
CEO  
V
CBO  
V
EBO  
65  
Emitter–Base Voltage  
4
Collector–Current — Continuous  
I
C
20  
Total Device Dissipation @ T = 25°C  
Derate above 25°C  
P
D
250  
1.43  
Watts  
W/°C  
C
Quiescent Current (without RF drive)  
Storage Temperature Range  
I
2 x 500  
mAdc  
CQ  
T
–65 to +150  
°C  
stg  
THERMAL CHARACTERISTICS  
Characteristic  
Thermal Resistance, Junction to Case (1)  
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)  
Symbol  
Max  
Unit  
R
0.7  
°C/W  
θJC  
C
Characteristic  
Symbol  
Min  
Typ  
Max  
Unit  
OFF CHARACTERISTICS  
Collector–Emitter Breakdown Voltage  
(I = 20 mAdc, I = 0)  
V
V
V
30  
65  
35  
80  
—
—
Vdc  
Vdc  
(BR)CEO  
(BR)CBO  
(BR)EBO  
C
B
Collector–Base Breakdown Voltage  
(I = 20 mAdc, I = 0)  
C
E
Emitter–Base Breakdown Voltage (I = 20 mAdc, I = 0)  
4
5
—
Vdc  
E
C
Collector–Emitter Leakage Current (V  
= 28 Vdc, R  
= 75 Ω)  
I
CER  
—
—
15  
mAdc  
CE  
BE  
NOTE:  
(continued)  
1. Thermal resistance is determined under specific RF condition.  
Teflon is a registered trademark of du Pont de Nemours & Co., Inc.  
Preferred devices are Motorola recommended choices for future use and best overall value.  
REV 6  
Motorola, Inc. 1994  
12345678

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