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TPSMP6.8A thru TPSMP43A PDF预览

TPSMP6.8A thru TPSMP43A

更新时间: 2024-10-01 14:50:51
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威世 - VISHAY /
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5页 92K
描述
High Power Density Surface Mount PAR? Transient Voltage Suppressors

TPSMP6.8A thru TPSMP43A 数据手册

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TPSMP6.8A thru TPSMP43A  
www.vishay.com  
Vishay General Semiconductor  
High Power Density Surface Mount PAR®  
Transient Voltage Suppressors  
FEATURES  
eSMP® Series  
• Junction  
passivation  
optimized  
design  
passivated anisotropic rectifier technology  
• TJ = 185 °C capability suitable for high reliability  
and automotive requirement  
• Very low profile - typical height of 1.0 mm  
• Ideal for automated placement  
• Unidirection only  
SMP (DO-220AA)  
• Excellent clamping capability  
• Low incremental surge resistance  
• Very fast response time  
Anode  
Cathode  
• Meets MSL level 1, per J-STD-020, LF maximum peak  
of 260 °C  
LINKS TO ADDITIONAL RESOURCES  
3
• AEC-Q101 qualified  
D
3
D
3D Models  
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
PRIMARY CHARACTERISTICS  
TYPICAL APPLICATIONS  
VBR  
6.8 V to 43 V  
Protection for ICs, drive transistors, signal lines of sensor  
units, and electronic units in consumer, computer,  
industrial, and automotive applications.  
VWM  
5.8 V to 36.8 V  
250 W  
P
PPM (for VBR 6.8 V)  
P
PPM (for VBR 7.5 V to 12 V)  
300 W  
MECHANICAL DATA  
P
PPM (for VBR 13 V to 43 V)  
400 W  
Case: SMP (DO-220AA)  
PD  
2.5 W  
Molding compound meets UL 94 V-0 flammability rating  
IFSM  
40 A  
Base P/NHM3_X  
- halogen-free, RoHS-compliant and  
TJ max.  
Polarity  
Package  
185 °C  
AEC-Q101 qualified (“X” denotes revision code e.g. A, B, ...)  
Unidirectional  
SMP (DO-220AA)  
Terminals: matte tin plated leads, solderable per  
J-STD-002 and JESD 22-B102  
HM3 suffix meets JESD 201 class 2 whisker test  
Polarity: color band denotes cathode end  
MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)  
PARAMETER  
Peak power dissipation with a 10/1000 μs waveform (fig. 1 and 3) (1)(2)  
Peak power pulse current with a 10/1000 μs waveform (fig. 1) (1)  
Power dissipation on infinite heatsink, TA = 75 °C  
SYMBOL  
PPPM  
IPPM  
VALUE  
See table next page  
See table next page  
2.5  
UNIT  
W
A
PD  
W
Peak forward surge current 10 ms single half sine-wave  
superimposed on rated load  
IFSM  
40  
A
Maximum instantaneous forward voltage at 25 A (3)  
VF  
2.5  
V
Operating junction and storage temperature range  
TJ, TSTG  
-65 to +185  
°C  
Notes  
(1)  
(2)  
(3)  
Non-repetitive current pulse, per fig. 3 and derated above TA = 25 °C per fig. 2  
Mounted on PCB with 5.0 mm x 5.0 mm copper pads attached to each terminal  
Pulse test: 300 μs pulse width, 1 % duty cycle  
Revision: 25-Apr-2022  
Document Number: 88471  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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