Datasheet > TPB65R360M

TPB65R360M

更新时间： 2024-04-09 18:58:58

品牌	Logo	应用领域
无锡紫光微 - WUXI UNIGROUP		电子
页数	文件大小	规格书
18页	1239K
描述
Multi-EPI超结功率MOSFET(Multi-EPI Super Junction MOSFET)是种新型功率器件，无锡紫光微电子限公司在国内率先推出成熟的Multi-EPI超结功率MOSF

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数据手册

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TPB65R360M 数据手册

TPA65R360M,TPB65R360M,TPC65R360M,

TPD65R360M,TPP65R360M,TPR65R360M,TPU65R360M

Wuxi Unigroup Microelectronics Co.,Ltd

Typical Characteristics T_J= 25ºC, unless otherwise noted

Figure 1. Output Characteristics

Figure 2. Transfer Characteristics

20V

10V

5.5V

4.5V

V_DS= 20V

T_J= 25ºC

T_J= 150ºC

V_DS, Drain-to-Source Voltage (V)

V_GS, Gate-to-Source Voltage (V)

Figure 3. On-Resistance vs. Drain Current

Figure 4. Capacitance

0.45

10⁴

10³

10²

10¹

10⁰

V_GS= 10V

T_J= 25ºC

V_GS= 0

f = 1MHz

C_iss

0.4

0.35

0.3

C_oss

C_rss

0.25

0.2

100

200

300

400

500

600

I_D, Drain Current (A)

V_DS, Drain-to-Source Voltage (V)

Figure 5. Gate Charge

Figure 6. Body Diode Forward Voltage

10²

10¹

10⁰

10^-1

T_J= 125ºC

V_DD= 120V

T_J= 25ºC

V_DD= 520V

0.5

1.5

Q_g, Total Gate Charge (nC)

V_SD, Source-to-Drain Voltage (V)

V1.0

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