Datasheet > TPB65R360M

TPB65R360M

更新时间： 2024-04-09 18:58:58

品牌	Logo	应用领域
无锡紫光微 - WUXI UNIGROUP		电子
页数	文件大小	规格书
18页	1239K
描述
Multi-EPI超结功率MOSFET(Multi-EPI Super Junction MOSFET)是种新型功率器件，无锡紫光微电子限公司在国内率先推出成熟的Multi-EPI超结功率MOSF

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TPB65R360M 数据手册

TPA65R360M,TPB65R360M,TPC65R360M,

TPD65R360M,TPP65R360M,TPR65R360M,TPU65R360M

Wuxi Unigroup Microelectronics Co.,Ltd

Absolute Maximum Ratings T_C= 25ºC, unless otherwise noted

Parameter

Symbol

Value

Unit

T_C= 25ºC

Continuous Drain Current

I_D

T_C= 100ºC

6.6

Pulsed Drain Current

(note1)

I_D,pulse

V_GSS

E_AS

±30

215

0.32

1.8

Gate-Source Voltage

Single Pulse Avalanche Energy

Repetitive Avalanche Energy

Avalanche Current

(note2)

E_AR

I_AR

MOSFET dv/dt Ruggedness, V_DS= 0...480V

Power Dissipation For TO-220F,TO-220FP-NL

dv/dt

V/ns

P_D

Power Dissipation For TO-263,TO-262,TO-252,TO-220,TO-251

Continuous Diode Forward Current

I_S

9.4

Diode Pulsed Current

(note1)

I_S,pulse

dv/dt

di_f/dt

Reverse Diode dv/dt

(note3)

V/ns

A/μs

ºC

Maximum Diode Commutation Speed

Operating Junction and Storage Temperature Range

500

-55~+150

T_J, T_stg

Thermal Resistance For TO-220F,TO-220FP-NL

Parameter

Symbol

Value

Unit

Thermal Resistance, Junction-to-Case

Thermal Resistance, Junction-to-Ambient

R_thJC

R_thJA

ºC/W

Thermal Resistance For TO-263,TO-262,TO-252,TO-220,TO-251

Parameter

Symbol

R_thJC

Value

1.5

Unit

Thermal Resistance, Junction-to-Case

Thermal Resistance, Junction-to-Ambient

ºC/W

R_thJA

V1.0

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