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TN0401L-TR1 PDF预览

TN0401L-TR1

更新时间: 2024-02-25 19:53:27
品牌 Logo 应用领域
威世 - VISHAY 开关晶体管
页数 文件大小 规格书
5页 51K
描述
TRANSISTOR 640 mA, 40 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-226AA, TO-92, 3 PIN, FET General Purpose Small Signal

TN0401L-TR1 技术参数

生命周期:Active零件包装代码:TO-92
包装说明:CYLINDRICAL, O-PBCY-W3针数:3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.21.00.95风险等级:5.67
Is Samacsys:N其他特性:LOW THRESHOLD
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:40 V
最大漏极电流 (ID):0.64 A最大漏源导通电阻:1.2 Ω
FET 技术:METAL-OXIDE SEMICONDUCTOR最大反馈电容 (Crss):15 pF
JEDEC-95代码:TO-226AAJESD-30 代码:O-PBCY-W3
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:CYLINDRICAL峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL认证状态:Not Qualified
表面贴装:NO端子形式:WIRE
端子位置:BOTTOM处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

TN0401L-TR1 数据手册

 浏览型号TN0401L-TR1的Datasheet PDF文件第2页浏览型号TN0401L-TR1的Datasheet PDF文件第3页浏览型号TN0401L-TR1的Datasheet PDF文件第4页浏览型号TN0401L-TR1的Datasheet PDF文件第5页 
TN0201L/0401L, VN0300L/LS  
Vishay Siliconix  
N-Channel 20-, 30-, 40-V (D-S) MOSFETs  
PRODUCT SUMMARY  
Part Number V(BR)DSS Min (V) rDS(on) Max (W)  
VGS(th) (V)  
ID (A)  
TN0201L  
TN0401L  
VN0300L  
VN0300LS  
20  
40  
30  
30  
1.2 @ V = 10 V  
0.5 to 2  
0.5 to 2  
0.64  
0.64  
0.64  
0.67  
GS  
1.2 @ V = 10 V  
GS  
1.2 @ V = 10 V  
0.8 to 2.5  
0.8 to 2.5  
GS  
1.2 @ V = 10 V  
GS  
FEATURES  
BENEFITS  
APPLICATIONS  
D Low On-Resistance: 0.85 W  
D Low Threshold: 1.4 V  
D Low Offset Voltage  
D Direct Logic-Level Interface: TTL/CMOS  
D Low-Voltage Operation  
D Easily Driven Without Buffer  
D High-Speed Circuits  
D Low Error Voltage  
D Drivers: Relays, Solenoids, Lamps, Hammers,  
Displays, Memories, Transistors, etc.  
D Low Input Capacitance: 38 pF  
D Fast Switching Speed: 9 ns  
D Low Input and Output Leakage  
D Battery Operated Systems  
D Solid-State Relays  
TO-226AA  
(TO-92)  
TO-92S  
(Copper Lead Frame)  
Device Marking  
Front View  
Device Marking  
Front View  
TN0201L  
1
1
2
3
S
G
D
S
G
D
“S” TN  
0201L  
xxyy  
VN0300LS  
“S” VN  
0300LS  
xxyy  
2
TN0401L  
“S” = Siliconix Logo  
xxyy = Date Code  
“S” TN  
0401L  
xxyy  
3
“S” = Siliconix Logo  
xxyy = Date Code  
Top View  
Top View  
VN0300L  
“S” VN  
0300L  
xxyy  
TN0201L  
TN0401L  
VN0300L  
VN0300LS  
ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)  
A
Parameter  
Symbol  
TN0201L  
TN0401L  
VN0300L VN0300LS  
Unit  
Drain-Source Voltage  
Gate-Source Voltage  
V
V
20  
"20  
0.64  
0.38  
1.5  
40  
"20  
0.64  
0.38  
1.5  
30  
"30  
0.64  
0.38  
3
30  
"30  
0.67  
0.43  
3
DS  
GS  
V
T = 25_C  
A
A
Continuous Drain Current  
I
D
(T = 150_C)  
Pulsed Drain Current  
J
T = 100_C  
A
a
I
DM  
T = 25_C  
A
0.8  
0.8  
0.8  
0.9  
A
Power Dissipation  
P
W
D
T = 100_C  
0.32  
156  
0.32  
156  
0.32  
156  
0.4  
Thermal Resistance, Junction-to-Ambient  
R
thJA  
156  
_C/W  
_C  
Operating Junction and Storage Temperature Range  
T , T  
J
–55 to 150  
stg  
Notes  
a. Pulse width limited by maximum junction temperature.  
Document Number: 70199  
S-04279—Rev. E, 16-Jul-01  
www.vishay.com  
11-1  

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