Datasheet > TN0520N3

TN0520N3

更新时间： 2024-02-26 08:32:11

品牌	Logo	应用领域
超科 - SUPERTEX		/
页数	文件大小	规格书
4页	60K
描述
N-Channel Enhancement-Mode Vertical DMOS FETs

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中文翻译

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数据手册

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TN0520N3 数据手册

TN0520

TN0524

Low Threshold

N-Channel Enhancement-Mode

Vertical DMOS FETs

Ordering Information

Order Number / Package

TO-92

BV_DSS

R_DS(ON)

I_D(ON)

V_GS(th)

(max)

BV_DGS

200V

240V

(max)

(min)

300mA

TO-39

TN0520N2

—

Die^†

10Ω

1.5V

TN0520N3

TN0520ND

TN0524ND

TN0524N3

^†MIL visual screening available

High Reliability Devices

Low Threshold DMOS Technology

See pages 5-4 and 5-5 for MILITARY STANDARD Process

Flows and Ordering Information.

These low threshold enhancement-mode (normally-off) transis-

tors utilize a vertical DMOS structure and Supertex's well-proven

silicon-gate manufacturing process. This combination produces

devices with the power handling capabilities of bipolar transistors

and with the high input impedance and positive temperature

coefficient inherent in MOS devices. Characteristic of all MOS

structures, these devices are free from thermal runaway and

thermally-induced secondary breakdown.

Features

■

Low threshold —1.5V max.

High input impedance

Low input capacitance — 45pF typical

Fast switching speeds

Supertex’s vertical DMOS FETs are ideally suited to a wide range

of switching and amplifying applications where very low threshold

voltage, highbreakdownvoltage, highinputimpedance, lowinput

capacitance, and fast switching speeds are desired.

Low on resistance

Free from secondary breakdown

Low input and output leakage

Complementary N- and P-channel devices

Package Options

Applications

■

Logic level interfaces – ideal for TTL and CMOS

Solid state relays

Battery operated systems

Photo voltaic drives

Analog switches

General purpose line drivers

Telecom switches

S G D

Absolute Maximum Ratings

Drain-to-Source Voltage

Drain-to-Gate Voltage

Gate-to-Source Voltage

TO-92

TO-39

Case: DRAIN

BV_DSS

BV_DGS

± 20V

Operating and Storage Temperature

Soldering Temperature*

-55°C to +150°C

300°C

Note: See Package Outline section for dimensions.

* Distance of 1.6 mm from case for 10 seconds.

7-39

12 3 4

中文翻译

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与TN0520N3相关器件

型号	品牌	获取价格	描述	数据表
TN0520N3P001	SUPERTEX	获取价格	Small Signal Field-Effect Transistor, 0.3A I(D), 200V, 1-Element, N-Channel, Silicon, Meta
TN0520N3P003	SUPERTEX	获取价格	Small Signal Field-Effect Transistor, 0.3A I(D), 200V, 1-Element, N-Channel, Silicon, Meta
TN0520N3P005	SUPERTEX	获取价格	Small Signal Field-Effect Transistor, 0.3A I(D), 200V, 1-Element, N-Channel, Silicon, Meta
TN0520N3P008	SUPERTEX	获取价格	Small Signal Field-Effect Transistor, 0.3A I(D), 200V, 1-Element, N-Channel, Silicon, Meta
TN0520N3P013	SUPERTEX	获取价格	Small Signal Field-Effect Transistor, 0.3A I(D), 200V, 1-Element, N-Channel, Silicon, Meta
TN0520N3P014	SUPERTEX	获取价格	Small Signal Field-Effect Transistor, 0.3A I(D), 200V, 1-Element, N-Channel, Silicon, Meta
TN0520N3P016	SUPERTEX	获取价格	Small Signal Field-Effect Transistor, 0.3A I(D), 200V, 1-Element, N-Channel, Silicon, Meta
TN0520N3P018	SUPERTEX	获取价格	Small Signal Field-Effect Transistor, 0.3A I(D), 200V, 1-Element, N-Channel, Silicon, Meta
TN0520ND	SUPERTEX	获取价格	N-Channel Enhancement-Mode Vertical DMOS FETs
TN0524	SUPERTEX	获取价格	N-Channel Enhancement-Mode Vertical DMOS FETs

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