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TMMDB3 PDF预览

TMMDB3

更新时间: 2024-01-04 04:36:53
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 数据判读及分析中心
页数 文件大小 规格书
4页 54K
描述
DIAC

TMMDB3 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:MELF
包装说明:MINI MELF-2针数:2
Reach Compliance Code:unknown风险等级:5.83

TMMDB3 数据手册

 浏览型号TMMDB3的Datasheet PDF文件第2页浏览型号TMMDB3的Datasheet PDF文件第3页浏览型号TMMDB3的Datasheet PDF文件第4页 
TMMDB3  
®
DIAC  
FEATURES  
VBO : 32V  
Breakover voltage range: 28 to 36V  
DESCRIPTION  
MINIMELF  
Functioning as a trigger diode with a fixed voltage  
reference, the TMMDB3 can be used in conjunc-  
tion with triacs for simplified gate control circuits  
or as a starting element in fluorescent lamp bal-  
lasts.  
ABSOLUTE MAXIMUM RATINGS (limiting values)  
Symbol  
Parameter  
Value  
Unit  
Repetitive peak on-state current  
2
A
ITRM  
tp = 20 µs  
F= 120 Hz  
Tstg  
Tj  
Storage temperature range  
Operating junction temperature range  
- 40 to + 125  
°C  
1/4  
March 2001 - Ed: 3A  

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