TM400HA-H

更新时间： 2024-02-27 08:18:36

品牌	Logo	应用领域
三菱 - MITSUBISHI		/
页数	文件大小	规格书
4页	56K
描述
MEDIUM POWER GENERAL USE INSULATED TYPE

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数据手册

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TM400HA-H 数据手册

MITSUBISHI THYRISTOR MODULES

TM400HA-M,-H,-24,-2H

MEDIUM POWER GENERAL USE

INSULATED TYPE

ABSOLUTE MAXIMUM RATINGS

Voltage class

Symbol

Parameter

Unit

VRRM

Repetitive peak reverse voltage

Non-repetitive peak reverse voltage

DC reverse voltage

400

480

320

400

480

320

800

960

640

800

960

640

1200

1350

960

1600

1700

1280

1600

1700

1280

VRSM

VR (DC)

VDRM

VDSM

VD (DC)

Repetitive peak off-state voltage

Non-repetitive peak off-state voltage

DC off-state voltage

1200

1350

960

Symbol

Parameter

RMS on-state current

Average on-state current

Conditions

Ratings

Unit

IT (RMS)

IT (AV)

ITSM

620

400

Single-phase, half-wave 180° conduction, TC=66°C

Surge (non-repetitive) on-state current One half cycle at 60Hz, peak value

8000

2.7 × 10

100

I t

I t for fusing

Value for one cycle of surge current

A s

di/dt

PGM

PG (AV)

VFGM

VRGM

IFGM

Critical rate of rise of on-state current VD=1/2VDRM, IG=1.0A, Tj=125°C

Peak gate power dissipation

A/µs

Average gate power dissipation

Peak gate forward voltage

3.0

Peak gate reverse voltage

5.0

Peak gate forward current

4.0

Junction temperature

–40~+125

2500

°C

Tstg

Storage temperature

°C

Viso

Isolation voltage

Mounting torque

Weight

Charged part to case

8.83~10.8

90~110

1.47~1.96

15~20

N·m

kg·cm

N·m

kg·cm

Main terminal screw M8

—

Mounting screw M5

Typical value

450

ELECTRICAL CHARACTERISTICS

Limits

Typ.

—

Symbol

Parameter

Test conditions

Unit

Min.

—

Max.

IRRM

Repetitive peak reverse current

Repetitive peak off-state current

On-state voltage

Tj=125°C, VRRM applied

Tj=125°C, VDRM applied

—

IDRM

VTM

—

1.4

—

Tj=125°C, ITM=1200A, instantaneous meas.

500

—

dv/dt

VGT

Critical rate of rise of off-state voltage Tj=125°C, VD=2/3VDRM

V/µs

—

3.0

—

Gate trigger voltage

Tj=25°C, VD=6V, RL=2Ω

0.25

—

VGD

Gate non-trigger voltage

Gate trigger current

Tj=125°C, VD=1/2VDRM

—

100

0.1

0.08

IGT

Tj=25°C, VD=6V, RL=2Ω

°C/W

—

Rth (j-c)

Rth (c-f)

Thermal resistance

Junction to case, per 1/2 module

Case to fin, conductive grease applied, per 1/2 module

—

Contact thermal resistance

Measured with a 500V megohmmeter between main terminal

and case

—

Insulation resistance

MΩ

Feb.1999

123 4

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