TM2EP64DPN, TM2EP64DJN, TM4EP64DPN, TM4EP64DJN
TM2EP72DPN, TM2EP72DJN, TM4EP72DPN, TM4EP72DJN
EXTENDED-DATA-OUT DYNAMIC RAM MODULES
SMMS684A – AUGUST 1997 – REVISED FEBRUARY 1998
†
absolute maximum ratings over ambient temperature range (unless otherwise noted)
Supply voltage range, V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –0.5 V to 4.6 V
DD
Voltage range on any pin (see Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . – 0.5 V to 4.6 V
Short-circuit output current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA
Power dissipation: TM2EP64DxN . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 W
TM2EP72DxN . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 W
TM4EP64DxN . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 W
TM4EP72DxN . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 W
Ambient temperature range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0°C to 70°C
A
stg
Storage temperature range, T
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . – 55°C to 125°C
†
Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and
functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
NOTE 1: All voltage values are with respect to V
.
SS
recommended operating conditions
MIN NOM
MAX
UNIT
V
V
V
V
V
V
Supply voltage
3
3.3
0
3.6
DD
Supply voltage
V
SS
High-level input voltage
High-level input voltage for the SPD device
Low-level input voltage
Ambient temperature
2
2
V
DD
+ 0.3
V
IH
5.5
0.8
70
V
IH–SPD
IL
–0.3
0
V
T
A
°C
capacitance over recommended ranges of supply voltage and ambient temperature, f = 1 MHz
(see Note 2)
’2EP64DxN
’2EP72DxN
’4EP64DxN
’4EP72DxN
PARAMETER
UNIT
MIN MAX
MIN MAX
MIN MAX
MIN MAX
C
C
C
C
C
C
C
C
Input capacitance, A0–A10
Input capacitance, OEx
42
30
9
47
37
16
37
37
9
82
58
16
30
38
16
9
92
72
30
37
37
16
9
pF
pF
pF
pF
pF
pF
pF
pF
i(A)
i(OE)
i(CAS)
i(RAS)
i(W)
Input capacitance, CASx
Input capacitance, RASx
30
30
9
Input capacitance, WEx
Output capacitance
o
Input/output capacitance, SDA input
Input capacitance, SA0,SA1,SA2,SCL inputs
9
9
i/o(SDA)
i(SPD)
7
7
7
7
NOTE 2:
V
DD
= NOM supply voltage ±10%, and the bias on pins under test is 0 V.
7
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