Datasheet > TLP747GF_07

TLP747GF_07

更新时间： 2024-01-23 11:46:22

品牌	Logo	应用领域
东芝 - TOSHIBA		光电二极管
页数	文件大小	规格书
2页	138K
描述
GaAs Ired & Photo−Thyristor

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中文翻译

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数据手册

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TLP747GF_07 数据手册

TLP747GF

TOSHIBA Photocoupler GaAs Ired & Photo−Thyristor

TLP747GF

Unit in mm

Office Machine

Switching Power Supply

The TOSHIBA TLP747GF consists of a photo−thyristor optically coupled

to a gallium arsenide infrared emitting diode in a six lead plastic DIP.

All parameters are tested to the specification of TLP747G.

(both condition and limits)

•

Peak off−state voltage: 400V min.

Trigger LED current: 15mA max.

On−state current: 150mA max.

UL recognized: UL1577, file no. E67349

BSI approved: BS EN60065: 2002

Certificate no. 7364

BS EN60950-1: 2002

Certificate no. 7365

•

SEMCO approved:EN60065,EN60950-1,EN60335-1

TOSHIBA

11−7A802

Certificate no.302586

Weight: 0.42 g

•

Isolation voltage: 4000Vrms min.

Option (D4) type

VDE approved: DIN EN 60747-5-2,

Certificate no.40009373

Maximum operating insulation voltage: 890, 1130V

Highest permissible over voltage: 6000, 8000V

(Note) When an EN 60747-5-2 approved type is needed,

please designate the “ Option (D4) ”

Pin Configuration (top view)

•

Creepage distance: 8.0mm (min.)

Clearance: 8.0mm (min.)

Internal creepage path: 4.0mm (min.)

Insulation thickness: 0.5mm (min.)

Conforming safety standards:

DIN 57 804. VDE0804 / 1.83

1 : ANODE

2 : CATHODE

3 : NC

DIN IEC65 / VDE0860 / 8.81

DIN IEC380 / VDE0806 / 8.81

DIN IEC435 / VDE0805 / draft nov. 84

DIN IEC601T1 / VDE0750T1 / 5.82

BS7002: 1989 (EN60950)

4 : CATHODE

5 : ANODE

6 : GATE

2007-10-01

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