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TISP4S040M1BJR-S PDF预览

TISP4S040M1BJR-S

更新时间: 2024-10-01 00:49:11
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伯恩斯 - BOURNS /
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描述
TISP4SxxxBJ Overvoltage Protector Series

TISP4S040M1BJR-S 数据手册

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TISP4SxxxL1BJ,  
TISP4SxxxM1BJ, TISP4SxxxM3BJ,  
TISP4SxxxT3BJ  
BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS  
TISP4SxxxBJ Overvoltage Protector Series  
TISP4SxxxBJ Overview  
These protection devices are designed to limit overvoltages on the telephone line. Overvoltages are normally caused by a.c. power system or  
lightning flash disturbances which are induced or conducted onto the telephone line. A single device provides 2-point protection and is  
typically used for the protection of 2-wire telecommunication equipment (e.g., between the Ring and Tip wires for telephones and modems).  
Combinations of devices can be used for multi-point protection (e.g. 3-point protection between Ring, Tip and Ground).  
The protector consists of a symmetrical voltage-triggered bidirectional thyristor. Overvoltages are initially clipped by breakdown clamping until  
the voltage rises to the breakover level, which causes the device to crowbar into a low-voltage on-state. This low-voltage on-state causes  
the current resulting from the overvoltage to be safely diverted within rated limits through the device. The high crowbar holding current helps  
prevent d.c. latchup as the diverted current subsides.  
Summary Electrical Characteristics, T = 25 °C (Unless Otherwise Noted)  
A
On-State  
Voltage  
Min. I  
Off-State  
Current  
Typ. C  
@1 V,  
H
j
Max. V  
BO  
V
di/dt =  
1 A/ms  
(mA)  
Max. I  
Max. I  
(A)  
DRM  
(V)  
BO  
T
Part Number  
@ 100 V/µs  
(V)  
V
@ I  
=
T
T
(mA)  
I
@ V  
1 MHz  
(pF)  
D
DRM  
2.2 A  
(V)  
(µA)  
TISP4S040L1BJR-S  
TISP4S040M1BJR-S  
TISP4S077M3BJR-S  
TISP4S088M3BJR-S  
TISP4S098M3BJR-S  
TISP4S1ꢀ0M3BJR-S  
TISP4S180M3BJR-S  
TISP4S±40M3BJR-S  
TISP4S±ꢀ0M3BJR-S  
TISP4S300M3BJR-S  
TISP4S320M3BJR-S  
TISP4S320T3BJR-S  
TISP4S400M3BJR-S  
±±2  
±±2  
±28  
±ꢀ2  
±72  
±1±0  
±140  
±180  
±190  
±±±0  
±±72  
±±72  
±300  
± 40  
± 40  
20  
20  
800  
800  
800  
800  
800  
800  
800  
800  
800  
800  
800  
800  
800  
±.±  
±.±  
±.±  
±.±  
±.±  
±.±  
±.±  
±.±  
±.±  
±.±  
±.±  
±.±  
±.±  
±2.0  
±2.0  
±2.0  
±2.0  
±2.0  
±2.0  
±2.0  
±2.0  
±2.0  
±2.0  
±2.0  
±2.0  
±2.0  
±2.0  
±2.0  
±2.0  
±2.0  
±2.0  
±2.0  
±2.0  
±2.0  
±2.0  
±2.0  
±2.0  
±2.0  
±2.0  
100  
1±0  
72  
72  
72  
22  
22  
42  
42  
42  
42  
42  
42  
± 77  
120  
120  
120  
120  
120  
120  
120  
120  
120  
120  
120  
± 88  
± 98  
± 1ꢀ0  
± 180  
± ±40  
± ±ꢀ0  
± 300  
± 320  
± 320  
± 400  
SMBJ Package (Top View)  
Device Symbol  
T
1
2
R(B)  
T(A)  
MDXXBG  
SD4XAA  
R
...........................................................................UL Pending  
Terminals T and R correspond to the  
alternative line designators of A and B  
*RoHS Directive 2002/95/EC Jan. 27, 2003 including annex and RoHS Recast 2011/65/EU June 8, 2011.  
JUNE 2012  
Specifications are subject to change without notice.  
Customers should verify actual device performance in their specific applications.  

TISP4S040M1BJR-S 替代型号

型号 品牌 替代类型 描述 数据表
TISP4040H1BJR-S BOURNS

类似代替

VERY LOW VOLTAGE BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS

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