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TIP50

更新时间: 2024-11-23 05:52:55
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无锡固电 - ISC 晶体晶体管开关局域网
页数 文件大小 规格书
2页 104K
描述
isc Silicon NPN Power Transistors

TIP50 数据手册

 浏览型号TIP50的Datasheet PDF文件第2页 
INCHANGE Semiconductor  
isc Product Specification  
isc Silicon NPN Power Transistors  
TIP50  
DESCRIPTION  
·DC Current Gain -hFE = 30~150@ IC= 0.3A  
·Collector-Emitter Sustaining Voltage-  
: VCEO(SUS) = 400V(Min)  
APPLICATIONS  
·Designed for line operated audio output amplifier,switchmode  
power supply drivers and other switching applications  
ABSOLUTE MAXIMUM RATINGS(Ta=25)  
SYMBOL  
VCBO  
VCEO  
VEBO  
IC  
PARAMETER  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current-Continuous  
Collector Current-Peak  
Base Current  
VALUE  
500  
400  
5
UNIT  
V
V
V
1.0  
A
ICM  
2.0  
A
IB  
0.6  
A
Collector Power Dissipation  
TC=25  
40  
PD  
W
Collector Power Dissipation  
Ta=25℃  
2
Tj  
Junction Temperature  
150  
-65~150  
Storage Temperature Range  
Tstg  
THERMAL CHARACTERISTICS  
SYMBOL  
PARAMETER  
MAX  
3.125  
62.5  
UNIT  
/W  
/W  
Thermal Resistance,Junction to Case  
Thermal Resistance,Junction to Ambient  
Rth j-c  
Rth j-a  
isc Websitewww.iscsemi.cn  

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