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TIP131 PDF预览

TIP131

更新时间: 2024-02-28 11:13:37
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3页 100K
描述
SILICON DARLINGTON POWER TRANSISTORS

TIP131 数据手册

 浏览型号TIP131的Datasheet PDF文件第2页浏览型号TIP131的Datasheet PDF文件第3页 
NPN TIP130 – 131 – 132  
SILICON DARLINGTON POWER TRANSISTORS  
NPN epitaxial-base transistors in a monolithic Dalrington circuit and housed in a TO-220  
enveloppe.  
They are intented for use in power linear and switching applications.  
The complementary PNP types are TIP135/136/137  
Compliance to RoHS.  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
VCBO  
Ratings  
Value  
Unit  
TIP130  
TIP131  
TIP132  
TIP130  
TIP131  
TIP132  
60  
80  
100  
60  
80  
100  
5
8
12  
0.3  
Collector-Base Voltage (IE= 0)  
V
VCEO  
Collector-Emitter Voltage (IB= 0)  
V
VEBO  
IC  
ICM  
IB  
Emitter-Base Voltage (IC= 0)  
Collector Current  
Collector Peak Current (1)  
Base Current  
V
A
A
A
Tcase  
tamb  
70  
2
PT  
Power Dissipation  
@ Tmb < 25°  
W
tJ  
ts  
Junction Temperature  
Storage Temperature range  
150  
-65 to +150  
°C  
THERMAL CHARACTERISTICS  
Symbol  
Ratings  
Value  
Unit  
RthJC  
RthJA  
From Junction to Case Thermal Resistance  
From Junction to Free-Air Thermal Resistance  
1.78  
62.5  
°C/W  
30/10/2012  
09/11/2012  
COMSET SEMICONDUCTORS  
1/3  

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