Datasheet > TIP135

TIP135

更新时间： 2024-09-26 07:04:31

品牌	Logo	应用领域
无锡固电 - ISC		晶体晶体管
页数	文件大小	规格书
2页	95K
描述
isc Silicon PNP Darlington Power Transistor

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TIP135 数据手册

INCHANGE Semiconductor

isc Product Specification

isc Silicon PNP Darlington Power Transistor

TIP135

DESCRIPTION

·High DC Current Gain-

: h_FE= 1000(Min)@ I_C= -4A

·Collector-Emitter Sustaining Voltage-

: V_CEO(SUS)= -60V(Min)

·Low Collector-Emitter Saturation Voltage-

: V_CE(sat)= -2.0V(Max)@ I_C= -4A

·Complement to Type TIP130

APPLICATIONS

·Designed for general-purpose amplifier and low-speed

switching applications

ABSOLUTE MAXIMUM RATINGS(T_a=25℃)

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

VALUE

-60

UNIT

-60

-5

Collector Current-Continuous

Collector Current-Peak

Base Current- Continuous

-8

I_CM

-12

I_B

-0.3

Collector Power Dissipation

@T_C=25℃

P_C

Collector Power Dissipation

@T_a=25℃

Junction Temperature

150

-65~150

℃

T_j

Storage Temperature Range

T_stg

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

1.785

63.5

UNIT

℃/W

Thermal Resistance,Junction to Case

Thermal Resistance,Junction to Ambient

R_{th j-c}

R_{th j-a}

isc Website：www.iscsemi.cn

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