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TIP101

更新时间: 2024-01-22 22:49:04
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管
页数 文件大小 规格书
6页 221K
描述
DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS

TIP101 数据手册

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Order this document  
by TIP100/D  
SEMICONDUCTOR TECHNICAL DATA  
. . . designed for general–purpose amplifier and low–speed switching applications.  
High DC Current Gain —  
= 2500 (Typ) @ I = 4.0 Adc  
Collector–Emitter Sustaining Voltage — @ 30 mAdc  
h
FE  
C
V
V
V
= 60 Vdc (Min) — TIP100, TIP105  
= 80 Vdc (Min) — TIP101, TIP106  
= 100 Vdc (Min) — TIP102, TIP107  
CEO(sus)  
CEO(sus)  
CEO(sus)  
Low Collector–Emitter Saturation Voltage —  
V
V
= 2.0 Vdc (Max) @ I = 3.0 Adc  
CE(sat)  
CE(sat)  
C
= 2.5 Vdc (Max) @ I = 8.0 Adc  
C
Monolithic Construction with Built–in Base–Emitter Shunt Resistors  
TO–220AB Compact Package  
*MAXIMUM RATINGS  
*Motorola Preferred Device  
TIP100,  
TIP105  
TIP101,  
TIP106  
TIP102,  
TIP107  
Rating  
Collector–Emitter Voltage  
Collector–Base Voltage  
Emitter–Base Voltage  
Symbol  
Unit  
Vdc  
Vdc  
Vdc  
DARLINGTON  
8 AMPERE  
COMPLEMENTARY SILICON  
POWER TRANSISTORS  
6080100 VOLTS  
80 WATTS  
V
CEO  
60  
60  
80  
80  
100  
100  
V
CB  
EB  
V
5.0  
Collector Current — Continuous  
Peak  
I
C
8.0  
15  
Adc  
Adc  
Base Current  
I
B
1.0  
Total Power Dissipation @ T = 25 C  
C
Derate above 25 C  
P
D
80  
0.64  
Watts  
W/ C  
Unclamped Inductive Load Energy (1)  
E
30  
mJ  
Total Power Dissipation @ T = 25 C  
A
Derate above 25 C  
P
D
2.0  
0.016  
Watts  
W/ C  
Operating and Storage Junction  
Temperature Range  
T , T  
65 to +150  
C
J
stg  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
Unit  
C/W  
C/W  
Thermal Resistance, Junction to Case  
Thermal Resistance, Junction to Ambient  
R
R
1.56  
62.5  
θJC  
CASE 221A–06  
TO–220AB  
θJA  
(1) I = 1.1 A, L = 50 mH, P.R.F. = 10 Hz, V  
= 20 V, R = 100 .  
BE  
C
CC  
T
T
C
A
4.0 80  
3.0 60  
2.0 40  
T
C
1.0 20  
T
A
0
0
0
20  
40  
60  
80  
100  
C)  
120  
140  
160  
T, TEMPERATURE (  
°
Figure 1. Power Derating  
Preferred devices are Motorola recommended choices for future use and best overall value.  
REV 7  
Motorola, Inc. 1995

TIP101 替代型号

型号 品牌 替代类型 描述 数据表
TIP101G ONSEMI

类似代替

Plastic Medium−Power Complementary Silicon Transistors
2N5886G ONSEMI

功能相似

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2N5885G ONSEMI

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Complementary Silicon High−Power Transistors

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