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THS4509RGTTG4 PDF预览

THS4509RGTTG4

更新时间： 2024-09-29 11:07:55
品牌 Logo 应用领域
德州仪器 - TI 放大器
页数 文件大小 规格书
30页 2105K
描述
1.9GHz、宽带、低噪声、低失真、全差分放大器 | RGT | 16 | -40 to 85

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THS4509RGTTG4 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Active零件包装代码：QFN
包装说明：QFN-16针数：16
Reach Compliance Code：compliantECCN代码：EAR99
HTS代码：8542.33.00.01Factory Lead Time：6 weeks
风险等级：5.23放大器类型：OPERATIONAL AMPLIFIER
架构：VOLTAGE-FEEDBACK最大平均偏置电流 (IIB)：15.5 µA
标称带宽 (3dB)：275 MHz标称共模抑制比：90 dB
频率补偿：NO最大输入失调电压：4000 µV
JESD-30 代码：S-PQCC-N16JESD-609代码：e4
长度：3 mm低-偏置：NO
低-失调：NO微功率：NO
湿度敏感等级：2负供电电压上限：-3 V
标称负供电电压 (Vsup)：-2.5 V功能数量：1
端子数量：16最高工作温度：85 °C
最低工作温度：-40 °C封装主体材料：PLASTIC/EPOXY
封装代码：HVQCCN封装等效代码：LCC16,.14SQ,20
封装形状：SQUARE封装形式：CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE
包装方法：TR峰值回流温度（摄氏度）：260
功率：NO电源：3/5 V
可编程功率：NO认证状态：Not Qualified
座面最大高度：1 mm标称压摆率：6600 V/us
子类别：Operational Amplifier最大压摆率：41.9 mA
供电电压上限：3 V标称供电电压 (Vsup)：2.5 V
表面贴装：YES温度等级：INDUSTRIAL
端子面层：Nickel/Palladium/Gold (Ni/Pd/Au)端子形式：NO LEAD
端子节距：0.5 mm端子位置：QUAD
处于峰值回流温度下的最长时间：NOT SPECIFIED标称均一增益带宽：3000000 kHz
宽带：YES宽度：3 mm
Base Number Matches：1

THS4509RGTTG4 数据手册

 浏览型号THS4509RGTTG4的Datasheet PDF文件第2页浏览型号THS4509RGTTG4的Datasheet PDF文件第3页浏览型号THS4509RGTTG4的Datasheet PDF文件第4页浏览型号THS4509RGTTG4的Datasheet PDF文件第5页浏览型号THS4509RGTTG4的Datasheet PDF文件第6页浏览型号THS4509RGTTG4的Datasheet PDF文件第7页 
THS4509  
www.ti.com  
SLOS454–JANUARY 2005  
WIDEBAND, LOW NOISE, LOW DISTORTION FULLY DIFFERENTIAL AMPLIFIER  
To allow for dc coupling to ADCs, its unique output  
common-mode control circuit maintains the output  
common-mode voltage within 3 mV offset (typ) from  
the set voltage, when set within 0.5 V of mid-supply,  
with less than 4 mV differential offset voltage. The  
common-mode set point is set to mid-supply by  
internal circuitry, which may be over-driven from an  
external source.  
FEATURES  
•
•
•
•
Fully Differential Architecture  
Centered Input Common-mode Range  
Minimum Gain of 2V/V (6 dB)  
Bandwidth: 1900 MHz (100 mVpp, G = 10 dB,  
RL = 200 Ω)  
•
•
•
Slew Rate: 6600 V/µs (2V step, G = 10 dB)  
1% Settling Time: 2 ns (2 V step, G = 10 dB)  
The input and output are optimized for best perform-  
ance with their common-mode voltages set to  
mid-supply. Along with high performance at low  
power supply voltage, this makes for extremely high  
performance single supply 5 V data acquisition sys-  
tems. The combined performance of the THS4509 in  
a gain of 10 dB driving the ADS5500 ADC, sampling  
at 125 MSPS, is 81 dBc SFDR and 69.1 dBc SNR  
with a –1 dBFS signal at 70 MHz.  
HD2: –75 dBc at 100 MHz (2 Vpp, G = 10 dB,  
RL = 1 kΩ)  
•
•
•
HD3: –80 dBc at 100 MHz (2 Vpp, G = 10 dB,  
RL = 1 kΩ)  
OIP2: 79 dBm at 70 MHz (2 Vpp envelope,  
G = 10 dB)  
OIP3: 43 dBm at 70 MHz (2 Vpp envelope,  
G = 10 dB)  
The THS4509 is offered in a Quad 16-pin leadless  
QFN package (RGT), and is characterized for oper-  
ation over the full industrial temperature range from  
–40°C to 85°C.  
•
•
Input Voltage Noise: 1.9 nV/√Hz (f >10 MHz)  
Noise Figure: 17.1 dB (50 Ω System, G = 10  
dB)  
V
IN  
100 Ω  
348 Ω  
2.5 V  
From  
50 Ω  
Source  
•
•
Output Common-Mode Control  
Power Supply:  
69.8 Ω  
V
OUT  
487 Ω  
487 Ω  
1:1  
To 50 Ω  
– Voltage: 3 V (±1.5 V) to 5 V (±2.5 V)  
– Current: 37.7 mA  
Test  
Equipment  
56.3 Ω  
THS 4509  
100 Ω  
0.22 µF  
49.9 Ω  
CM  
69.8 Ω  
Open  
•
Power-Down Capability: 0.65 mA  
−2.5 V  
APPLICATIONS  
348 Ω  
•
5 V Data Acquisition Systems High  
Linearity ADC Amplifier  
Wireless Communication  
Medical Imaging  
Test and Measurement  
-75  
-80  
-85  
-90  
-95  
G = 10 dB,  
V
= 2 V  
,
•
•
•
O
PP  
R
L
= 1 kW  
DESCRIPTION  
HD  
3
The THS4509 is a wideband, fully differential op amp  
designed for 5 V data acquisition systems. It has very  
low noise at 1.9 nV/√Hz, and extremely low harmonic  
distortion of –75 dBc HD2 and –80 dBc HD3 at 100  
MHz with 2 Vpp, G = 10 dB, and 1 kΩ load. Slew rate  
is very high at 6600 Vµs and with settling time of 2 ns  
to 1% (2 V step) it is ideal for pulsed applications. It is  
designed for minimum gain of 6 dB, but is optimized  
for gain of 10 dB.  
-100  
-105  
-110  
HD  
2
10  
100  
1
f - Frequency - MHz  
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas  
Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.  
PRODUCTION DATA information is current as of publication date.  
Copyright © 2005, Texas Instruments Incorporated  
Products conform to specifications per the terms of the Texas  
Instruments standard warranty. Production processing does not  
necessarily include testing of all parameters.  
1234567...30

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THS4509RGTTG4 替代型号

型号 品牌 替代类型 描述 数据表
THS4508RGTT TI

类似代替

 WIDEBAND, LOW NOISE, LOW DISTORTION FULLY DIFFERENTIAL AMPLIFIER
THS4509RGTT TI

类似代替

 WIDEBAND, LOW NOISE, LOW DISTORTION FULLY DIFFERENTIAL AMPLIFIER
THS4509RGTR TI

类似代替

 WIDEBAND, LOW NOISE, LOW DISTORTION FULLY DIFFERENTIAL AMPLIFIER

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