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THS4304DBVTG4 PDF预览

THS4304DBVTG4

更新时间: 2024-02-01 00:52:35
品牌 Logo 应用领域
德州仪器 - TI 放大器光电二极管
页数 文件大小 规格书
32页 1503K
描述
Wideband Operational Amplifier 5-SOT-23 -40 to 85

THS4304DBVTG4 技术参数

是否Rohs认证:符合生命周期:Obsolete
零件包装代码:SOT-23包装说明:SOT-23, 5 PIN
针数:5Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8542.33.00.01
风险等级:5.33Is Samacsys:N
放大器类型:OPERATIONAL AMPLIFIER架构:VOLTAGE-FEEDBACK
最大平均偏置电流 (IIB):18 µA25C 时的最大偏置电流 (IIB):12 µA
标称共模抑制比:92 dB频率补偿:YES
最大输入失调电压:5000 µVJESD-30 代码:R-PDSO-G5
JESD-609代码:e4长度:2.9 mm
低-偏置:NO低-失调:NO
微功率:NO湿度敏感等级:1
负供电电压上限:标称负供电电压 (Vsup):
功能数量:1端子数量:5
最高工作温度:85 °C最低工作温度:-40 °C
封装主体材料:PLASTIC/EPOXY封装代码:LSSOP
封装等效代码:TSOP5/6,.11,37封装形状:RECTANGULAR
封装形式:SMALL OUTLINE, LOW PROFILE, SHRINK PITCH包装方法:TR
峰值回流温度(摄氏度):260功率:NO
电源:+-1.35/+-2.5/2.7/5 V可编程功率:NO
认证状态:Not Qualified座面最大高度:1.45 mm
标称压摆率:750 V/us子类别:Operational Amplifier
最大压摆率:19.4 mA供电电压上限:6 V
标称供电电压 (Vsup):3 V表面贴装:YES
技术:BIPOLAR温度等级:INDUSTRIAL
端子面层:Nickel/Palladium/Gold (Ni/Pd/Au)端子形式:GULL WING
端子节距:0.95 mm端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED标称均一增益带宽:830000 kHz
宽带:YES宽度:1.6 mm
Base Number Matches:1

THS4304DBVTG4 数据手册

 浏览型号THS4304DBVTG4的Datasheet PDF文件第3页浏览型号THS4304DBVTG4的Datasheet PDF文件第4页浏览型号THS4304DBVTG4的Datasheet PDF文件第5页浏览型号THS4304DBVTG4的Datasheet PDF文件第7页浏览型号THS4304DBVTG4的Datasheet PDF文件第8页浏览型号THS4304DBVTG4的Datasheet PDF文件第9页 
THS4304  
www.ti.com  
SLOS436AMARCH 2004REVISED JULY 2004  
ELECTRICAL CHARACTERISTICS  
Specifications: VS = 3 V: RF = 249 , RL = 499 , and G = +2 unless otherwise noted  
TYP  
OVER TEMPERATURE  
TEST  
–40°C  
to  
85°C  
PARAMETER  
CONDITIONS  
LEVEL(1)  
0°C to  
70°C  
MIN/  
MAX  
25°C  
25°C  
UNITS  
AC PERFORMANCE  
G = +1, VO = 100 mVpp  
G = +2, VO = 100 mVpp  
G = +5, VO = 100 mVpp  
G = +10, VO = 100 mVpp  
G >+10  
3
GHz  
MHz  
MHz  
MHz  
MHz  
MHz  
V/µs  
V/µs  
ns  
Typ  
Typ  
Typ  
Typ  
Typ  
Typ  
Typ  
Typ  
Typ  
Typ  
Typ  
C
C
C
C
C
C
C
C
C
C
C
900  
190  
83  
Small-Signal Bandwidth  
Gain Bandwidth Product  
Large-Signal Bandwidth  
830  
450  
750  
675  
4.5  
20  
G = +2, VO = 1 VPP  
G = +2, VO = 1-V Step  
G = +2, VO = 1-V Step  
G = –2, VO = 0.5-V Step  
G = –2, VO = 0.5-V Step  
G = +2, VO = 0.5-V Step  
Slew Rate  
Settling Time to 1%  
Settling Time to 0.1%  
Rise / Fall Times  
ns  
1.5  
ns  
Harmonic Distortion  
Second Harmonic Distortion  
G = +2,  
VO = 0.5 VPP  
f = 10 MHz  
–92  
–91  
dBc  
dBc  
Typ  
Typ  
C
C
,
RL = 499 Ω  
Third Harmonic Distortion  
Noise Figure  
G = +2, f = 1 GHz  
f = 1 MHz  
15  
2.4  
2.1  
dB  
Typ  
Typ  
Typ  
C
C
C
Input Voltage Noise  
Input Current Noise  
DC PERFORMANCE  
nV/Hz  
pA/Hz  
f = 1 MHz  
Open-Loop Voltage Gain (AOL  
)
VO = ± 0.5 V, VCM = 1.5 V  
49  
2
44  
4
dB  
mV  
Min  
Max  
Typ  
Max  
Typ  
Max  
Typ  
A
A
B
A
B
A
B
Input Offset Voltage  
5
5
5
5
Input Offset Voltage Drift  
Input Bias Current  
µV/°C  
µA  
7
12  
1
18  
50  
1.2  
10  
18  
50  
1.2  
10  
VCM = 1.5 V  
Input Bias Current Drift  
Input Offset Current  
nA/°C  
µA  
0.4  
Input Offset Current Drift  
INPUT CHARACTERISTICS  
nA/°C  
–0.2  
to 3.2  
0.2 to 0.4 to 0.4 to  
Common-Mode Input Range  
V
Min  
A
2.8  
2.6  
2.6  
Common-Mode Rejection Ratio  
Input Resistance  
VO = ± 0.09 V, VCM = 1.5 V  
92  
100  
1.5  
80  
70  
70  
dB  
kΩ  
pF  
Min  
Typ  
Typ  
A
C
C
Each input, referenced to GND  
Input Capacitance  
(1) Test levels: (A) 100% tested at 25°C. Over temperature limits by characterization and simulation. (B) Limits set by characterization and  
simulation. (C) Typical value only for information.  
6

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