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THS3001HVCDRG4 PDF预览

THS3001HVCDRG4

更新时间： 2024-01-13 20:30:58
品牌 Logo 应用领域
德州仪器 - TI 放大器商用集成电路
页数 文件大小 规格书
32页 671K
描述
IC IC,OP-AMP,SINGLE,BIPOLAR,SOP,8PIN,PLASTIC, Operational Amplifier

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中文翻译

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THS3001HVCDRG4 技术参数

是否Rohs认证： 符合生命周期：Obsolete
零件包装代码：SOIC包装说明：,
针数：8Reach Compliance Code：compliant
ECCN代码：EAR99HTS代码：8542.33.00.01
风险等级：5.84商用集成电路类型：VIDEO AMPLIFIER
峰值回流温度（摄氏度）：NOT SPECIFIED处于峰值回流温度下的最长时间：NOT SPECIFIED
Base Number Matches：1

THS3001HVCDRG4 数据手册

 浏览型号THS3001HVCDRG4的Datasheet PDF文件第2页浏览型号THS3001HVCDRG4的Datasheet PDF文件第3页浏览型号THS3001HVCDRG4的Datasheet PDF文件第4页浏览型号THS3001HVCDRG4的Datasheet PDF文件第5页浏览型号THS3001HVCDRG4的Datasheet PDF文件第6页浏览型号THS3001HVCDRG4的Datasheet PDF文件第7页 
DGN−8  
THS3001  
D−8  
www.ti.com  
SLOS217E–JULY 1998–REVISED MARCH 2005  
420-MHz HIGH-SPEED CURRENT-FEEDBACK AMPLIFIER  
FEATURES  
APPLICATIONS  
•
•
•
Communication  
Imaging  
High-Quality Video  
•
High Speed  
– 420 MHz Bandwidth (G = 1, -3 dB)  
– 6500 V/µs Slew Rate  
– 40-ns Settling Time (0.1%)  
High Output Drive, IO = 100 mA  
Excellent Video Performance  
– 115 MHz Bandwidth (0.1 dB, G = 2)  
– 0.01% Differential Gain  
THS3001  
D OR DGN PACKAGE  
(TOP VIEW)  
•
•
NC  
IN−  
IN+  
NC  
V
OUT  
NC  
1
2
3
4
8
7
6
5
CC+  
– 0.02° Differential Phase  
Low 3-mV (max) Input Offset Voltage  
Very Low Distortion  
V
CC−  
•
•
NC − No internal connection  
– THD = -96 dBc at f = 1 MHz  
– THD = -80 dBc at f = 10 MHz  
Wide Range of Power Supplies  
– VCC = ±4.5 V to ±16 V  
RELATED DEVICES  
THS41011/2  
290-MHz VFB High-Speed Amplifier  
500-mA CFB HIgh-Speed Amplifier  
250-mA CFB High-Speed Amplifier  
•
•
THS6012  
THS6022  
Evaluation Module Available  
DESCRIPTION  
The THS3001 is a high-speed current-feedback operational amplifier, ideal for communication, imaging, and  
high-quality video applications. This device offers a very fast 6500-V/µs slew rate, a 420-MHz bandwidth, and  
40-ns settling time for large-signal applications requiring excellent transient response. In addition, the THS3001  
operates with a very low distortion of –96 dBc, making it well suited for applications such as wireless  
communication basestations or ultrafast ADC or DAC buffers.  
HARMONIC DISTORTION  
vs FREQUENCY  
OUTPUT AMPLITUDE  
vs FREQUENCY  
−70  
8
7
6
V
CC  
= ±15 V  
Gain = 2  
R = 680 Ω  
F
V
V
= ±15 V  
CC  
−75  
−80  
= 2 V  
O
PP  
R = 150 Ω  
R = 750 Ω  
L
F
5
4
3
V
CC  
= ±5 V  
R = 750 Ω  
F
3rd Harmonic  
−85  
−90  
2
1
2nd Harmonic  
G = 2  
R = 150 Ω  
V = 200 mV RMS  
−95  
L
0
I
−100  
−1  
100k  
1M  
10M  
100M  
1G  
100k  
1M  
f − Frequency − Hz  
10M  
f − Frequency − Hz  
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam  
during storage or handling to prevent electrostatic damage to the MOS gates.  
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas  
Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.  
PRODUCTION DATA information is current as of publication date.  
Copyright © 1998–2005, Texas Instruments Incorporated  
Products conform to specifications per the terms of the Texas  
Instruments standard warranty. Production processing does not  
necessarily include testing of all parameters.  
1234567...32

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