TPH3207WS
Important Notice
Transphorm Gallium Nitride (GaN) Switches provide significant advantages over silicon (Si)
Superjunction MOSFETs with lower gate charge, faster switching speeds and smaller re-
verse recovery charge. GaN Switches exhibit in-circuit switching speeds in excess of
100 V/ns compared to current silicon technology usually switching at rates less than 50V/ns.
The fast switching of GaN devices reduces current-voltage cross-over losses and enables
high frequency operation while simultaneously achieving high efficiency. However, taking full
advantage of the fast switching characteristics of GaN Switches requires adherence to spe-
cific PCB layout guidelines and probing techniques .
Transphorm suggests visiting application note “Printed Circuit Board Layout and Probing for
GaN Power Switches” before evaluating Transphorm GaN switches. Below are some practi-
cal rules that should be followed during the evaluation.
When Evaluating Transphorm GaN Switches
DO
DO NOT
Minimize circuit inductance by keeping
traces short, both in the drive and power
loop
Twist the pins of TO-220 or TO-247 to ac-
commodate GDS board layout
Minimize lead length of TO-220 and TO-
247 package when mounting to the PCB
Use long traces in drive circuit, long lead
length of the devices
Use shortest sense loop for probing. At-
tach the probe and its ground connection
directly to the test points
Use differential mode probe, or probe
ground clip with long wire
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TPH3207WS
June 27, 2016 JH
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