TPH3207WS
Electrical Characteristics (TC=25 °C unless otherwise stated)
Symbol
Parameter
Min Typical Max Unit
Test Conditions
Static
Maximum Drain-Source Volt-
age
VDSS-MAX
VGS(th)
650
-
-
V
V
VGS=0 V
VDS=VGS, ID=0.7mA
Gate Threshold Voltage
1.65
2.1
2.65
Drain-Source On-Resistance
RDS(on)
RDS(on)
IDSS
IDSS
-
-
35
72
41
mΩ VGS=8V, ID =32A, TJ = 25 °C
mΩ VGS=8V, ID =32A,TJ = 150 °C
(TJ = 25 °C)
Drain-Source On-Resistance
-
(TJ = 150 °C)
Drain-to-Source
Leakage Current, TJ = 25 °C
Drain-to-Source
Leakage Current, TJ = 150 °C
Gate-to-Source Forward
Leakage Current
Gate-to-Source Reverse
Leakage Current
-
-
-
-
5
10
-
50
-
µA
µA
VDS=650V, VGS=0V, TJ = 25 °C
VDS=650V, VGS=0V, TJ = 150 °C
VGS= 18 V
100
-100
IGSS
nA
pF
-
VGS= -18 V
Dynamic
CISS
Input Capacitance
Output Capacitance
-
-
2197
202
-
-
COSS
VGS=0 V, VDS=400 V, f =1 MHz
CRSS
CO(er)
Reverse Transfer Capacitance
-
-
27
-
-
Output Capacitance,
energy related a
280
VGS=0 V, VDS=0 V to 400 V
Output Capacitance,
time related b
CO(tr)
-
404
-
Qg
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
-
-
-
28
10
6
42
-
Qgs
Qgd
nC
ns
VDS =400 V VGS= 0-8 V, ID = 32 A
-
td(on)
Turn-On Delay
-
56
-
VDS =400 V , VGS= 0-10 V, ID = 32A,
0.5A gate drive, test circuit as Fig.
13.
tr
Rise Time
Turn-Off Delay
-
-
12
79
-
-
Td(off)
tf
Fall Time
-
9
-
Reverse operation
IS
Reverse Current
-
-
-
31
A
V
VGS=0 V, TC=100 oC
VSD
Reverse Voltage
1.73
-
VGS=0 V, IS=32 A, TJ=25 oC
VGS=0 V, IS=16 A, TJ=25 oC
VSD
trr
Reverse Voltage
-
-
-
1.24
42
-
-
-
V
Reverse Recovery Time
Reverse Recovery Charge
ns
nC
IS=32A, VDD=400 V, di/dt =1000 A/s,
TJ=25 oC
Qrr
175
Notes
a: Equivalent capacitance to give same stored energy from 0 to 400V
b: Equivalent capacitance to give same charging time from 0 to 400V
www.transphormusa.com
TPH3207WS
June 27, 2016 JH
2