TEKT5400S-ASZ

更新时间： 2024-09-27 22:19:55

品牌	Logo	应用领域
威世 - VISHAY		晶体光电晶体管光电晶体管
页数	文件大小	规格书
7页	159K
描述
Silicon NPN Phototransistor

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TEKT5400S-ASZ 数据手册

TEKT5400S

Vishay Semiconductors

Silicon NPN Phototransistor

Description

TEKT5400S is a high sensitive silicon NPN epitaxial

planar phototransistor in a flat side view plastic

package.A small recessed lens provides a high

sensitivity in a low profile case.

The molded package itself is an IR filter, spectrum

matched to IR emitters (λ > 850nm or 950 nm).

Features

16733

D High photo sensitivity

D Daylight filter

D Molded package with side view lens

D Angle of half sensitivity ϕ = ± 37°

D Matched with IR–Emitter TSKS5400S

Applications

D Detector in electronic control and drive circuits

Order Instruction

Ordering Code

TEKT5400S

Remarks

2000 pcs in Plastic Bags

2.54 mm Pin distance (lead to lead), height of taping 16 mm

TEKT5400S–ASZ

Absolute Maximum Ratings

amb

= 25°C

Parameter

Test Conditions

Symbol

Value

Unit

Collector Emitter Voltage

Emitter Collector Voltage

Collector Current

CEO

ECO

100

°C

K/W

Peak Collector Current

Total Power Dissipation

Junction Temperature

t /T = 0.5, t x 10 ms

200

amb

x 40 °C

150

tot

100

Storage Temperature Range

Operating Temperature

Soldering Temperature

Thermal Resistance Junction/Ambient

stg

–40...+100

–40...+85

260

amb

t x 5 s

thJA

400

Document Number 81569

Rev. 1, 24–May–02

www.vishay.com

1 (7)

12 3 4 5 6 7

中文翻译

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