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TDA9888

更新时间: 2024-02-24 23:55:17
品牌 Logo 应用领域
恩智浦 - NXP 放大器
页数 文件大小 规格书
22页 133K
描述
DVB selective AGC amplifier

TDA9888 技术参数

是否Rohs认证:不符合生命周期:Transferred
包装说明:SSOP, SSOP16,.3Reach Compliance Code:unknown
风险等级:5.78Is Samacsys:N
JESD-30 代码:R-PDSO-G16JESD-609代码:e0
端子数量:16最高工作温度:70 °C
最低工作温度:-20 °C封装主体材料:PLASTIC/EPOXY
封装代码:SSOP封装等效代码:SSOP16,.3
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, SHRINK PITCH
电源:5 V认证状态:Not Qualified
子类别:Other Consumer ICs最大压摆率:64 mA
表面贴装:YES温度等级:COMMERCIAL
端子面层:Tin/Lead (Sn/Pb)端子形式:GULL WING
端子节距:0.635 mm端子位置:DUAL
Base Number Matches:1

TDA9888 数据手册

 浏览型号TDA9888的Datasheet PDF文件第5页浏览型号TDA9888的Datasheet PDF文件第6页浏览型号TDA9888的Datasheet PDF文件第7页浏览型号TDA9888的Datasheet PDF文件第9页浏览型号TDA9888的Datasheet PDF文件第10页浏览型号TDA9888的Datasheet PDF文件第11页 
Philips Semiconductors  
Product specification  
DVB selective AGC amplifier  
TDA9888TS; TDA9889TS  
CHARACTERISTICS  
VP = 5 V; Tamb = 25 °C; 8 MHz system; see Tables 1 or 2, CW test input signal is used for specification;  
Vi(IF)(rms) = 10 mV frequency fIF = 36 MHz for low IF output of 5 MHz; IF input from 50 via broadband transformer  
1 : 1; gain controlled amplifier adjusted to low IF differential output of 2 V (p-p); measurements taken in test circuit of  
Fig.11 with external 4 MHz reference signal of 140 mV (RMS); unless otherwise specified.  
SYMBOL  
PARAMETER  
CONDITIONS  
MIN.  
TYP.  
MAX.  
UNIT  
Supply; pin VP  
VP  
IP  
supply voltage  
supply current  
total power dissipation  
note 1  
4.5  
5
5.5  
V
46  
55  
64  
mA  
Ptot  
275  
352  
mW  
IF amplifier; pins IF1 and IF2; differential  
GIF(max)  
GIF(min)  
GIF(cr)  
maximum conversion gain  
minimum conversion gain  
IF gain control range  
output peak-to-peak level to 85  
90  
20  
70  
15  
80  
2
dB  
input RMS level ratio  
23  
dB  
see Fig.3  
60  
dB  
BIF(3dB)(ll)  
BIF(3dB)(ul)  
Ri(dif)  
lower limit 3 dB IF bandwidth note 2  
upper limit 3 dB IF bandwidth note 2  
MHz  
MHz  
kΩ  
pF  
differential input resistance  
differential input capacitance  
DC input voltage  
note 2  
note 2  
Ci(dif)  
3
VI  
1.9  
V
Low IF output signal; pins LIF1 and LIF2; differential; see Fig.8  
Vo(LIF)(p-p)  
typical low IF operating output  
voltage (peak-to-peak value)  
2
V
V
V
Vclip(u)  
upper clipping voltage level  
(single-ended)  
2.9  
Vclip(l)  
lower clipping voltage level  
(single-ended)  
0.6  
Ro(diff)  
VO  
output resistance (differential) note 2  
DC output voltage  
2
1
150  
V
Ibias(int)  
internal DC bias current for  
0.8  
mA  
emitter-follower (single-ended)  
Io(source)(max) maximum AC and DC output  
source current (single-ended)  
2.5  
0.6  
mA  
mA  
Io(sink)(max)  
maximum AC and DC output  
sink current (single-ended)  
note 3  
note 2  
ZL(diff)  
differential load impedance  
1.7  
kΩ  
αLIF  
low IF band amplitude  
characteristic  
0 dB at middle of band  
(standard independent)  
0.9  
+0.9  
dB  
td(g)(LIF)  
low IF band group delay ripple from 1 MHz to 2 MHz  
from 2 MHz to end of band  
150  
100  
ns  
ns  
αN1  
low-pass filter attenuation  
6 MHz band; at 11.75 MHz  
7 MHz band; at 13.75 MHz  
8 MHz band; at 15.75 MHz  
any band; at 27 MHz  
15  
15  
15  
40  
dB  
dB  
dB  
dB  
α27MHz  
low-pass filter attenuation  
50  
2004 Nov 02  
8

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